Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current-voltage measurements

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Abstract

Barrier height values of Ni contacts to Mg-doped p -type GaN (p-GaN) were obtained from current-voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.

Original languageEnglish
Article number122109
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number12
DOIs
Publication statusPublished - 2005 Mar 21

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thermionic emission
electrical measurement
field emission
electric contacts
x ray spectroscopy
depletion
photoelectron spectroscopy
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current-voltage measurements",
abstract = "Barrier height values of Ni contacts to Mg-doped p -type GaN (p-GaN) were obtained from current-voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.",
author = "Lin, {Yow Jon}",
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N2 - Barrier height values of Ni contacts to Mg-doped p -type GaN (p-GaN) were obtained from current-voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.

AB - Barrier height values of Ni contacts to Mg-doped p -type GaN (p-GaN) were obtained from current-voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.

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