Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

Yow-Jon Lin, Jian Huang Lin

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The current-voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of -120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes.

Original languageEnglish
Pages (from-to)224-229
Number of pages6
JournalApplied Surface Science
Volume311
DOIs
Publication statusPublished - 2014 Aug 30

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Graphite
Graphene
Diodes
Annealing
Stoichiometry
Thermionic emission
Current voltage characteristics
Temperature measurement
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes",
abstract = "The current-voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of -120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes.",
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Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes. / Lin, Yow-Jon; Lin, Jian Huang.

In: Applied Surface Science, Vol. 311, 30.08.2014, p. 224-229.

Research output: Contribution to journalArticle

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