Anderson insulators in self-assembled gold nanoparticles thin films: Single electron hopping between charge puddles originated from disorder

Cheng Wei Jiang, I. Chih Ni, Yun Lien Hsieh, Shien Der Tzeng, Cen Shawn Wu, Watson Kuo

Research output: Contribution to journalArticle

Abstract

The Anderson insulating states in Au nanoparticle assembly are identified and studied under the application of magnetic fields and gate voltages. When the inter-nanoparticle tunneling resistance is smaller than the quantum resistance, the system showing zero Mott gap can be insulating at very low temperature. In contrast to Mott insulators, Anderson insulators exhibit great negative magnetoresistance, inferring charge delocalization in a strong magnetic field. When probed by the electrodes spaced by ~200 nm, they also exhibit interesting gate-modulated current similar to the multi-dot single electron transistors. These results reveal the formation of charge puddles due to the interplay of disorder and quantum interference at low temperatures.

Original languageEnglish
Article number645
JournalMaterials
Volume10
Issue number6
DOIs
Publication statusPublished - 2017 Jun 12

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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