Abstract
Many researches report that the mobility in organic material is dependent on not only the gate field but also the grain size. There is also some evidence to prove that the gate length is strongly related to the carrier mobility. We construct both the analytical model of organic thin film transistor and the large signal circuit model designed by T-CAD to fit the measured I DS - V DS curves. We first apply basic I DS - V DS equations in both triode and saturation regions with mobility μ best fitted to measured I-V curves. The "best-fitted" μ increases with the gate length, and is related to the increase of total channel resistance due to the presence of small grains size of pentacene next to source/drain electrodes. We then use the Advanced Design System software to design the large signal circuit model. Similar to the MOSFET, we add the additional parameters to fit the I DS - V DS curves, ex: Rgd, Rgs, and Rp. Here, Rgd. With the circuit simulation, we find that Rgd presents the leakage current from gate to source, and it affects the slope of curves in the saturation region in the I DS - V DS curves. The equivalent circuit can fit the I DS - V DS curves very well with the proper parameter set.
| Original language | English |
|---|---|
| Title of host publication | Organic Field-Effect Transistors V |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | Organic Field-Effect Transistors V - San Diego, CA, United States Duration: 2006 Aug 13 → 2006 Aug 15 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 6336 |
| ISSN (Print) | 0277-786X |
Other
| Other | Organic Field-Effect Transistors V |
|---|---|
| Country | United States |
| City | San Diego, CA |
| Period | 06-08-13 → 06-08-15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
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Analytical and T-CAD modeling of pentacene thin-film transistors. / Chen, Yet Min; Chen, Yu Sheng; Huang, Jian Jang; Lee, Jiun Haw; Wang, Yu-Wu; Wang, Yi Kai.
Organic Field-Effect Transistors V. 2006. 63361H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6336).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Analytical and T-CAD modeling of pentacene thin-film transistors
AU - Chen, Yet Min
AU - Chen, Yu Sheng
AU - Huang, Jian Jang
AU - Lee, Jiun Haw
AU - Wang, Yu-Wu
AU - Wang, Yi Kai
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Many researches report that the mobility in organic material is dependent on not only the gate field but also the grain size. There is also some evidence to prove that the gate length is strongly related to the carrier mobility. We construct both the analytical model of organic thin film transistor and the large signal circuit model designed by T-CAD to fit the measured I DS - V DS curves. We first apply basic I DS - V DS equations in both triode and saturation regions with mobility μ best fitted to measured I-V curves. The "best-fitted" μ increases with the gate length, and is related to the increase of total channel resistance due to the presence of small grains size of pentacene next to source/drain electrodes. We then use the Advanced Design System software to design the large signal circuit model. Similar to the MOSFET, we add the additional parameters to fit the I DS - V DS curves, ex: Rgd, Rgs, and Rp. Here, Rgd. With the circuit simulation, we find that Rgd presents the leakage current from gate to source, and it affects the slope of curves in the saturation region in the I DS - V DS curves. The equivalent circuit can fit the I DS - V DS curves very well with the proper parameter set.
AB - Many researches report that the mobility in organic material is dependent on not only the gate field but also the grain size. There is also some evidence to prove that the gate length is strongly related to the carrier mobility. We construct both the analytical model of organic thin film transistor and the large signal circuit model designed by T-CAD to fit the measured I DS - V DS curves. We first apply basic I DS - V DS equations in both triode and saturation regions with mobility μ best fitted to measured I-V curves. The "best-fitted" μ increases with the gate length, and is related to the increase of total channel resistance due to the presence of small grains size of pentacene next to source/drain electrodes. We then use the Advanced Design System software to design the large signal circuit model. Similar to the MOSFET, we add the additional parameters to fit the I DS - V DS curves, ex: Rgd, Rgs, and Rp. Here, Rgd. With the circuit simulation, we find that Rgd presents the leakage current from gate to source, and it affects the slope of curves in the saturation region in the I DS - V DS curves. The equivalent circuit can fit the I DS - V DS curves very well with the proper parameter set.
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UR - http://www.scopus.com/inward/citedby.url?scp=33751412865&partnerID=8YFLogxK
U2 - 10.1117/12.679748
DO - 10.1117/12.679748
M3 - Conference contribution
AN - SCOPUS:33751412865
SN - 0819464155
SN - 9780819464156
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Organic Field-Effect Transistors V
ER -