Analytical and T-CAD modeling of pentacene thin-film transistors

Yet Min Chen, Yu Sheng Chen, Jian Jang Huang, Jiun Haw Lee, Yu-Wu Wang, Yi Kai Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Many researches report that the mobility in organic material is dependent on not only the gate field but also the grain size. There is also some evidence to prove that the gate length is strongly related to the carrier mobility. We construct both the analytical model of organic thin film transistor and the large signal circuit model designed by T-CAD to fit the measured I DS - V DS curves. We first apply basic I DS - V DS equations in both triode and saturation regions with mobility μ best fitted to measured I-V curves. The "best-fitted" μ increases with the gate length, and is related to the increase of total channel resistance due to the presence of small grains size of pentacene next to source/drain electrodes. We then use the Advanced Design System software to design the large signal circuit model. Similar to the MOSFET, we add the additional parameters to fit the I DS - V DS curves, ex: Rgd, Rgs, and Rp. Here, Rgd. With the circuit simulation, we find that Rgd presents the leakage current from gate to source, and it affects the slope of curves in the saturation region in the I DS - V DS curves. The equivalent circuit can fit the I DS - V DS curves very well with the proper parameter set.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors V
DOIs
Publication statusPublished - 2006 Dec 1
EventOrganic Field-Effect Transistors V - San Diego, CA, United States
Duration: 2006 Aug 132006 Aug 15

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6336
ISSN (Print)0277-786X

Other

OtherOrganic Field-Effect Transistors V
CountryUnited States
CitySan Diego, CA
Period06-08-1306-08-15

Fingerprint

Thin-film Transistor
Thin film transistors
computer aided design
Computer aided design
transistors
Triodes
Curve
Networks (circuits)
Circuit simulation
Carrier mobility
curves
thin films
Modeling
Leakage currents
Equivalent circuits
Analytical models
Grain Size
Electrodes
Saturation
grain size

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chen, Y. M., Chen, Y. S., Huang, J. J., Lee, J. H., Wang, Y-W., & Wang, Y. K. (2006). Analytical and T-CAD modeling of pentacene thin-film transistors. In Organic Field-Effect Transistors V [63361H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6336). https://doi.org/10.1117/12.679748
Chen, Yet Min ; Chen, Yu Sheng ; Huang, Jian Jang ; Lee, Jiun Haw ; Wang, Yu-Wu ; Wang, Yi Kai. / Analytical and T-CAD modeling of pentacene thin-film transistors. Organic Field-Effect Transistors V. 2006. (Proceedings of SPIE - The International Society for Optical Engineering).
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Chen, YM, Chen, YS, Huang, JJ, Lee, JH, Wang, Y-W & Wang, YK 2006, Analytical and T-CAD modeling of pentacene thin-film transistors. in Organic Field-Effect Transistors V., 63361H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6336, Organic Field-Effect Transistors V, San Diego, CA, United States, 06-08-13. https://doi.org/10.1117/12.679748

Analytical and T-CAD modeling of pentacene thin-film transistors. / Chen, Yet Min; Chen, Yu Sheng; Huang, Jian Jang; Lee, Jiun Haw; Wang, Yu-Wu; Wang, Yi Kai.

Organic Field-Effect Transistors V. 2006. 63361H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6336).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chen YM, Chen YS, Huang JJ, Lee JH, Wang Y-W, Wang YK. Analytical and T-CAD modeling of pentacene thin-film transistors. In Organic Field-Effect Transistors V. 2006. 63361H. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.679748