Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method

Yow Jon Lin; Wei Chung Chen; Hsing Cheng Chang; Chia Jyi Liu; Zhi Ru Lin

doi:10.1016/j.jcrysgro.2008.06.064

Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method

Yow Jon Lin, Wei Chung Chen, Hsing Cheng Chang, Chia Jyi Liu, Zhi Ru Lin

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In the study, ZnO, Zn_0.95Al_0.05O and Mg-doped Zn_0.95Al_0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn_0.95Al_0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn_0.95Al_0.05O film was 1.58 times the BEL intensity of the Zn_0.95Al_0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.

Original language	English
Pages (from-to)	4110-4114
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	18
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.06.064
Publication status	Published - 2008 Aug 15

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{19d41bbbb2884389891b89a778f71465,

title = "Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method",

abstract = "In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.",

author = "Lin, {Yow Jon} and Chen, {Wei Chung} and Chang, {Hsing Cheng} and Liu, {Chia Jyi} and Lin, {Zhi Ru}",

year = "2008",

month = aug,

day = "15",

doi = "10.1016/j.jcrysgro.2008.06.064",

language = "English",

volume = "310",

pages = "4110--4114",

journal = "Journal of Crystal Growth",

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T1 - Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method

AU - Lin, Yow Jon

AU - Chen, Wei Chung

AU - Chang, Hsing Cheng

AU - Liu, Chia Jyi

AU - Lin, Zhi Ru

PY - 2008/8/15

Y1 - 2008/8/15

N2 - In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.

AB - In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.

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