Abstract
In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.
| Original language | English |
|---|---|
| Pages (from-to) | 4110-4114 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 310 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2008 Aug 15 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method. / Lin, Yow Jon; Chen, Wei Chung; Chang, Hsing Cheng; Liu, Chia Jyi; Lin, Zhi Ru.
In: Journal of Crystal Growth, Vol. 310, No. 18, 15.08.2008, p. 4110-4114.Research output: Contribution to journal › Article
TY - JOUR
T1 - Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method
AU - Lin, Yow Jon
AU - Chen, Wei Chung
AU - Chang, Hsing Cheng
AU - Liu, Chia Jyi
AU - Lin, Zhi Ru
PY - 2008/8/15
Y1 - 2008/8/15
N2 - In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.
AB - In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.
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U2 - 10.1016/j.jcrysgro.2008.06.064
DO - 10.1016/j.jcrysgro.2008.06.064
M3 - Article
AN - SCOPUS:49749094000
VL - 310
SP - 4110
EP - 4114
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 18
ER -