Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method

Yow Jon Lin, Wei Chung Chen, Hsing Cheng Chang, Chia Jyi Liu, Zhi Ru Lin

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.

Original languageEnglish
Pages (from-to)4110-4114
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number18
DOIs
Publication statusPublished - 2008 Aug 15

Fingerprint

Sol-gel process
Luminescence
Doping (additives)
gels
luminescence
degradation
Degradation
room temperature
Sol-gels
Photoluminescence
x rays
Capacitance
X ray photoelectron spectroscopy
capacitance
trapping
photoelectron spectroscopy
photoluminescence
X ray diffraction
life (durability)
conductivity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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title = "Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method",
abstract = "In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.",
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Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method. / Lin, Yow Jon; Chen, Wei Chung; Chang, Hsing Cheng; Liu, Chia Jyi; Lin, Zhi Ru.

In: Journal of Crystal Growth, Vol. 310, No. 18, 15.08.2008, p. 4110-4114.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol-gel method

AU - Lin, Yow Jon

AU - Chen, Wei Chung

AU - Chang, Hsing Cheng

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AU - Lin, Zhi Ru

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AB - In the study, ZnO, Zn0.95Al0.05O and Mg-doped Zn0.95Al0.05O films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the films. The authors found that the Zn0.95Al0.05O film was 0.56 times the intensity of the band-edge luminescence (BEL) of the ZnO film at room temperature and the Mg-doped Zn0.95Al0.05O film was 1.58 times the BEL intensity of the Zn0.95Al0.05O film at room temperature. According to the experimental results, the authors suggested that the induced reduction of the BEL intensity by Al doping was attributed to an increase in the number of nonradiative recombination defects, a decrease in the nonradiative recombination lifetime, and the enhancement of capacitance variation related to trapping/detrapping of charges.

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