Analysis of tem image contrast of quantum-dot semiconductor clusters in glasses

Li Chi Liu, Subhash H. Risbud

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Nanometre-size semiconductor clusters trapped in glass matrices represent a novel class of nonlinear optical materials. Microstructural characterization of these materials by conventional and high-resolution transmission electron microscopy (TEM and HRTEM) shows the sensitivity of bright-field image contrast to the nature of the specific II-VI semiconductors (CdS, CdSe) precipitated in the glass matrices. An analysis based on electron-scattering intensity and structure-factor calculations is presented to account for the quality of TEM and HRTEM images observed for CdS- and CdSe-containing quantum-dot glasses.

Original languageEnglish
Pages (from-to)327-332
Number of pages6
JournalPhilosophical Magazine Letters
Volume61
Issue number6
DOIs
Publication statusPublished - 1990 Jan 1

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image contrast
quantum dots
glass
transmission electron microscopy
high resolution
optical materials
matrices
electron scattering
sensitivity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

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Analysis of tem image contrast of quantum-dot semiconductor clusters in glasses. / Liu, Li Chi; Risbud, Subhash H.

In: Philosophical Magazine Letters, Vol. 61, No. 6, 01.01.1990, p. 327-332.

Research output: Contribution to journalArticle

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