Abstract
Nanometre-size semiconductor clusters trapped in glass matrices represent a novel class of nonlinear optical materials. Microstructural characterization of these materials by conventional and high-resolution transmission electron microscopy (TEM and HRTEM) shows the sensitivity of bright-field image contrast to the nature of the specific II-VI semiconductors (CdS, CdSe) precipitated in the glass matrices. An analysis based on electron-scattering intensity and structure-factor calculations is presented to account for the quality of TEM and HRTEM images observed for CdS- and CdSe-containing quantum-dot glasses.
| Original language | English |
|---|---|
| Pages (from-to) | 327-332 |
| Number of pages | 6 |
| Journal | Philosophical Magazine Letters |
| Volume | 61 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1990 Jun |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Liu, L. C., & Risbud, S. H. (1990). Analysis of tem image contrast of quantum-dot semiconductor clusters in glasses. Philosophical Magazine Letters, 61(6), 327-332. https://doi.org/10.1080/09500839008206500