Abstract
Nanometre-size semiconductor clusters trapped in glass matrices represent a novel class of nonlinear optical materials. Microstructural characterization of these materials by conventional and high-resolution transmission electron microscopy (TEM and HRTEM) shows the sensitivity of bright-field image contrast to the nature of the specific II-VI semiconductors (CdS, CdSe) precipitated in the glass matrices. An analysis based on electron-scattering intensity and structure-factor calculations is presented to account for the quality of TEM and HRTEM images observed for CdS- and CdSe-containing quantum-dot glasses.
| Original language | English |
|---|---|
| Pages (from-to) | 327-332 |
| Number of pages | 6 |
| Journal | Philosophical Magazine Letters |
| Volume | 61 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1990 Jun |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Analysis of tem image contrast of quantum-dot semiconductor clusters in glasses. / Liu, Li Chi; Risbud, Subhash H.
In: Philosophical Magazine Letters, Vol. 61, No. 6, 06.1990, p. 327-332.Research output: Contribution to journal › Article
TY - JOUR
T1 - Analysis of tem image contrast of quantum-dot semiconductor clusters in glasses
AU - Liu, Li Chi
AU - Risbud, Subhash H.
PY - 1990/6
Y1 - 1990/6
N2 - Nanometre-size semiconductor clusters trapped in glass matrices represent a novel class of nonlinear optical materials. Microstructural characterization of these materials by conventional and high-resolution transmission electron microscopy (TEM and HRTEM) shows the sensitivity of bright-field image contrast to the nature of the specific II-VI semiconductors (CdS, CdSe) precipitated in the glass matrices. An analysis based on electron-scattering intensity and structure-factor calculations is presented to account for the quality of TEM and HRTEM images observed for CdS- and CdSe-containing quantum-dot glasses.
AB - Nanometre-size semiconductor clusters trapped in glass matrices represent a novel class of nonlinear optical materials. Microstructural characterization of these materials by conventional and high-resolution transmission electron microscopy (TEM and HRTEM) shows the sensitivity of bright-field image contrast to the nature of the specific II-VI semiconductors (CdS, CdSe) precipitated in the glass matrices. An analysis based on electron-scattering intensity and structure-factor calculations is presented to account for the quality of TEM and HRTEM images observed for CdS- and CdSe-containing quantum-dot glasses.
UR - http://www.scopus.com/inward/record.url?scp=0025447902&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025447902&partnerID=8YFLogxK
U2 - 10.1080/09500839008206500
DO - 10.1080/09500839008206500
M3 - Article
AN - SCOPUS:0025447902
VL - 61
SP - 327
EP - 332
JO - Philosophical Magazine Letters
JF - Philosophical Magazine Letters
SN - 0950-0839
IS - 6
ER -