Analysis of tem image contrast of quantum-dot semiconductor clusters in glasses

Li Chi Liu; Subhash H. Risbud

doi:10.1080/09500839008206500

Analysis of tem image contrast of quantum-dot semiconductor clusters in glasses

Li Chi Liu, Subhash H. Risbud

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Nanometre-size semiconductor clusters trapped in glass matrices represent a novel class of nonlinear optical materials. Microstructural characterization of these materials by conventional and high-resolution transmission electron microscopy (TEM and HRTEM) shows the sensitivity of bright-field image contrast to the nature of the specific II-VI semiconductors (CdS, CdSe) precipitated in the glass matrices. An analysis based on electron-scattering intensity and structure-factor calculations is presented to account for the quality of TEM and HRTEM images observed for CdS- and CdSe-containing quantum-dot glasses.

Original language	English
Pages (from-to)	327-332
Number of pages	6
Journal	Philosophical Magazine Letters
Volume	61
Issue number	6
DOIs	https://doi.org/10.1080/09500839008206500
Publication status	Published - 1990 Jun

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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AB - Nanometre-size semiconductor clusters trapped in glass matrices represent a novel class of nonlinear optical materials. Microstructural characterization of these materials by conventional and high-resolution transmission electron microscopy (TEM and HRTEM) shows the sensitivity of bright-field image contrast to the nature of the specific II-VI semiconductors (CdS, CdSe) precipitated in the glass matrices. An analysis based on electron-scattering intensity and structure-factor calculations is presented to account for the quality of TEM and HRTEM images observed for CdS- and CdSe-containing quantum-dot glasses.

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