Analysis of pentacene thin film transistors in different atmospheres

Yu Wu Wang, Horng Long Cheng, Yi Kai Wang, Tang Hsiang Hu, Jia Chong Ho, Cheng Chung Lee, Tan Fu Lei, Ching Fa Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This investigation addresses the electrical properties of pentacene-based thin film transistors in air, dry air and high vacuum. A potential barrier model was applied to explain the gate dependent field effect mobility behavior. The results show the trap density in air higher than that in a vacuum.

Original languageEnglish
Title of host publicationProceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
EditorsH.P. David Shieh, F.C. Chen
Pages520-522
Number of pages3
Publication statusPublished - 2005 Dec 1
EventInternational Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
Duration: 2005 Feb 212005 Feb 24

Publication series

NameInternational Display Manufacturing Conference and Exhibition, IDMC'05

Other

OtherInternational Display Manufacturing Conference and Exhibition, IDMC'05
CountryJapan
CityTaipei
Period05-02-2105-02-24

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Analysis of pentacene thin film transistors in different atmospheres'. Together they form a unique fingerprint.

  • Cite this

    Wang, Y. W., Cheng, H. L., Wang, Y. K., Hu, T. H., Ho, J. C., Lee, C. C., Lei, T. F., & Yeh, C. F. (2005). Analysis of pentacene thin film transistors in different atmospheres. In H. P. David Shieh, & F. C. Chen (Eds.), Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05 (pp. 520-522). (International Display Manufacturing Conference and Exhibition, IDMC'05).