TY - JOUR
T1 - An optimization design in the HV nLDMOS by Taguchi method
AU - Chen, Shen Li
AU - Wu, Tzung Shian
AU - Chen, Yun Ru
AU - Chen, Hung Wei
AU - Shih, Chun Hsing
AU - Chen, H. H.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - This paper applied the Taguchi method to simulate the latch-up effect of nLDMOS to achieve an optimization design. The applied model is for an nLDMOS structure with high voltage well plus the adaptive (adjustment) layers of source & drain, and an N-type buried layer. Although the methods we could choose is abundant, we hope to effectively obtain the data which is useful for statistics in order to judge the correct characteristic of parameters. We applied the Taguchi method to perform an optimization in the paper. There are six parameters with two levels in this work, so we choose the Taguchi table to be L 8(2 7). By this way, it can decrease the times of experiment much effectively.
AB - This paper applied the Taguchi method to simulate the latch-up effect of nLDMOS to achieve an optimization design. The applied model is for an nLDMOS structure with high voltage well plus the adaptive (adjustment) layers of source & drain, and an N-type buried layer. Although the methods we could choose is abundant, we hope to effectively obtain the data which is useful for statistics in order to judge the correct characteristic of parameters. We applied the Taguchi method to perform an optimization in the paper. There are six parameters with two levels in this work, so we choose the Taguchi table to be L 8(2 7). By this way, it can decrease the times of experiment much effectively.
UR - http://www.scopus.com/inward/record.url?scp=84859170732&partnerID=8YFLogxK
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U2 - 10.4028/www.scientific.net/AMR.482-484.81
DO - 10.4028/www.scientific.net/AMR.482-484.81
M3 - Conference article
AN - SCOPUS:84859170732
VL - 482-484
SP - 81
EP - 84
JO - Advanced Materials Research
JF - Advanced Materials Research
SN - 1022-6680
T2 - 3rd international Conference on Manufacturing Science and Engineering, ICMSE 2012
Y2 - 27 March 2012 through 29 March 2012
ER -