An optimization design in the HV nLDMOS by Taguchi method

Shen Li Chen, Tzung Shian Wu, Yun Ru Chen, Hung Wei Chen, Chun Hsing Shih, H. H. Chen

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

This paper applied the Taguchi method to simulate the latch-up effect of nLDMOS to achieve an optimization design. The applied model is for an nLDMOS structure with high voltage well plus the adaptive (adjustment) layers of source & drain, and an N-type buried layer. Although the methods we could choose is abundant, we hope to effectively obtain the data which is useful for statistics in order to judge the correct characteristic of parameters. We applied the Taguchi method to perform an optimization in the paper. There are six parameters with two levels in this work, so we choose the Taguchi table to be L 8(2 7). By this way, it can decrease the times of experiment much effectively.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalAdvanced Materials Research
Volume482-484
DOIs
Publication statusPublished - 2012 Apr 4
Event3rd international Conference on Manufacturing Science and Engineering, ICMSE 2012 - Xiamen, China
Duration: 2012 Mar 272012 Mar 29

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Taguchi methods
Statistics
Electric potential
Experiments
Design optimization

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chen, Shen Li ; Wu, Tzung Shian ; Chen, Yun Ru ; Chen, Hung Wei ; Shih, Chun Hsing ; Chen, H. H. / An optimization design in the HV nLDMOS by Taguchi method. In: Advanced Materials Research. 2012 ; Vol. 482-484. pp. 81-84.
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An optimization design in the HV nLDMOS by Taguchi method. / Chen, Shen Li; Wu, Tzung Shian; Chen, Yun Ru; Chen, Hung Wei; Shih, Chun Hsing; Chen, H. H.

In: Advanced Materials Research, Vol. 482-484, 04.04.2012, p. 81-84.

Research output: Contribution to journalConference article

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