An investigation of single- And multi-finger nMOSFETs for the n output pin ESD protection in integrated circuits

Shen Li Chen; Guan Jhong Chen; B. L. Wu; Po Yin Chen; H. H. Chen

doi:10.1109/ICSICT.2008.4734541

An investigation of single- And multi-finger nMOSFETs for the n output pin ESD protection in integrated circuits

Shen Li Chen, Guan Jhong Chen, B. L. Wu, Po Yin Chen, H. H. Chen

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

This work is referring to the nMOSFET singer-finger, multi-finger structures under the Electro-Static Discharge (ESD) zapping, and to evaluate the current distribution situations. By using the TCAD and HSpice, because of the internal parasitic resistance differences in each one finger, which can cause non-uniform turned on. Meanwhile, with different interior parasitic capacitor on each nMOSFET type, which will be inflected the device high-current-injection behavior.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	341-344
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734541
Publication status	Published - 2008 Dec 1
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 2008 Oct 20 → 2008 Oct 23

Other

Other	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country	China
City	Beijing
Period	08-10-20 → 08-10-23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

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title = "An investigation of single- And multi-finger nMOSFETs for the n output pin ESD protection in integrated circuits",

abstract = "This work is referring to the nMOSFET singer-finger, multi-finger structures under the Electro-Static Discharge (ESD) zapping, and to evaluate the current distribution situations. By using the TCAD and HSpice, because of the internal parasitic resistance differences in each one finger, which can cause non-uniform turned on. Meanwhile, with different interior parasitic capacitor on each nMOSFET type, which will be inflected the device high-current-injection behavior.",

author = "Chen, {Shen Li} and Chen, {Guan Jhong} and Wu, {B. L.} and Chen, {Po Yin} and Chen, {H. H.}",

year = "2008",

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pages = "341--344",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

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Chen, SL, Chen, GJ, Wu, BL, Chen, PY & Chen, HH 2008, An investigation of single- And multi-finger nMOSFETs for the n output pin ESD protection in integrated circuits. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734541, pp. 341-344, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 08-10-20. https://doi.org/10.1109/ICSICT.2008.4734541

An investigation of single- And multi-finger nMOSFETs for the n output pin ESD protection in integrated circuits. / Chen, Shen Li; Chen, Guan Jhong; Wu, B. L.; Chen, Po Yin; Chen, H. H.

ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 341-344 4734541.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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