An investigation of single- And multi-finger nMOSFETs for the n output pin ESD protection in integrated circuits

Shen Li Chen, Guan Jhong Chen, B. L. Wu, Po Yin Chen, H. H. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This work is referring to the nMOSFET singer-finger, multi-finger structures under the Electro-Static Discharge (ESD) zapping, and to evaluate the current distribution situations. By using the TCAD and HSpice, because of the internal parasitic resistance differences in each one finger, which can cause non-uniform turned on. Meanwhile, with different interior parasitic capacitor on each nMOSFET type, which will be inflected the device high-current-injection behavior.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages341-344
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 2008 Oct 202008 Oct 23

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08-10-2008-10-23

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Chen, S. L., Chen, G. J., Wu, B. L., Chen, P. Y., & Chen, H. H. (2008). An investigation of single- And multi-finger nMOSFETs for the n output pin ESD protection in integrated circuits. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 341-344). [4734541] https://doi.org/10.1109/ICSICT.2008.4734541