Abstract
This work is referring to the nMOSFET singer-finger, multi-finger structures under the Electro-Static Discharge (ESD) zapping, and to evaluate the current distribution situations. By using the TCAD and HSpice, because of the internal parasitic resistance differences in each one finger, which can cause non-uniform turned on. Meanwhile, with different interior parasitic capacitor on each nMOSFET type, which will be inflected the device high-current-injection behavior.
| Original language | English |
|---|---|
| Title of host publication | ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings |
| Pages | 341-344 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Event | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 2008 Oct 20 → 2008 Oct 23 |
Other
| Other | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 |
|---|---|
| Country | China |
| City | Beijing |
| Period | 08-10-20 → 08-10-23 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
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An investigation of single- And multi-finger nMOSFETs for the n output pin ESD protection in integrated circuits. / Chen, Shen Li; Chen, Guan Jhong; Wu, B. L.; Chen, Po Yin; Chen, H. H.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 341-344 4734541.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - An investigation of single- And multi-finger nMOSFETs for the n output pin ESD protection in integrated circuits
AU - Chen, Shen Li
AU - Chen, Guan Jhong
AU - Wu, B. L.
AU - Chen, Po Yin
AU - Chen, H. H.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - This work is referring to the nMOSFET singer-finger, multi-finger structures under the Electro-Static Discharge (ESD) zapping, and to evaluate the current distribution situations. By using the TCAD and HSpice, because of the internal parasitic resistance differences in each one finger, which can cause non-uniform turned on. Meanwhile, with different interior parasitic capacitor on each nMOSFET type, which will be inflected the device high-current-injection behavior.
AB - This work is referring to the nMOSFET singer-finger, multi-finger structures under the Electro-Static Discharge (ESD) zapping, and to evaluate the current distribution situations. By using the TCAD and HSpice, because of the internal parasitic resistance differences in each one finger, which can cause non-uniform turned on. Meanwhile, with different interior parasitic capacitor on each nMOSFET type, which will be inflected the device high-current-injection behavior.
UR - http://www.scopus.com/inward/record.url?scp=60649096737&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=60649096737&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2008.4734541
DO - 10.1109/ICSICT.2008.4734541
M3 - Conference contribution
AN - SCOPUS:60649096737
SN - 9781424421855
SP - 341
EP - 344
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
ER -