An angle modulation reflectance spectroscopy characterization of a GaAs/GaAlAs asymmetric microcavity structure

Research output: Contribution to journalArticle

Abstract

An angle modulation reflectance spectroscopy was developed to study the GaAs/GaAlAs based asymmetric microcavity structure. Results demonstrate that the AMR in conjunction with the angle-dependent R measurements can yield a considerable amount of information concerning the QW features for characterizing the wafer and help the manufacturers to check the growth specifications.

Original languageEnglish
Pages (from-to)194-196
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number2
DOIs
Publication statusPublished - 2004 Jan 12

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reflectance
modulation
spectroscopy
specifications
wafers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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An angle modulation reflectance spectroscopy characterization of a GaAs/GaAlAs asymmetric microcavity structure. / Lin, D. Y.

In: Applied Physics Letters, Vol. 84, No. 2, 12.01.2004, p. 194-196.

Research output: Contribution to journalArticle

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