An angle modulation reflectance spectroscopy characterization of a GaAs/GaAlAs asymmetric microcavity structure

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An angle modulation reflectance spectroscopy was developed to study the GaAs/GaAlAs based asymmetric microcavity structure. Results demonstrate that the AMR in conjunction with the angle-dependent R measurements can yield a considerable amount of information concerning the QW features for characterizing the wafer and help the manufacturers to check the growth specifications.

Original languageEnglish
Pages (from-to)194-196
Number of pages3
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2004 Jan 12


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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