Ambient-atmosphere annealing effect on the carrier conduction behavior based on the linear-regime transfer characteristics of pentacene thin film transistors

Yow Jon Lin, H. Y. Tsao

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The linear-regime transfer properties of the annealed pentacene-based organic thin film transistors (OTFTs) in air at various temperatures up to 375 K are examined. It is found that the linear-regime carrier mobility increases with increasing annealing temperature reaching a maximum at 350 K, and then decreases with further increasing of annealing temperature beyond that point. However, an increase in annealing temperature leads to the shift of the threshold voltage towards positive gate-source voltages. An analysis through the temperature-dependent transfer characteristics of OTFTs reveals that the increased carrier mobility is the result of the reduced values of the hopping distance and the barrier height for hopping.

Original languageEnglish
Pages (from-to)57-61
Number of pages5
JournalMicroelectronic Engineering
Volume149
DOIs
Publication statusPublished - 2016 Jan 5

Fingerprint

Thin film transistors
transistors
Annealing
conduction
atmospheres
annealing
thin films
Carrier mobility
carrier mobility
Temperature
temperature
Threshold voltage
threshold voltage
pentacene
shift
air
Electric potential
electric potential
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{83580a70dddb468899983195ba1a2db5,
title = "Ambient-atmosphere annealing effect on the carrier conduction behavior based on the linear-regime transfer characteristics of pentacene thin film transistors",
abstract = "The linear-regime transfer properties of the annealed pentacene-based organic thin film transistors (OTFTs) in air at various temperatures up to 375 K are examined. It is found that the linear-regime carrier mobility increases with increasing annealing temperature reaching a maximum at 350 K, and then decreases with further increasing of annealing temperature beyond that point. However, an increase in annealing temperature leads to the shift of the threshold voltage towards positive gate-source voltages. An analysis through the temperature-dependent transfer characteristics of OTFTs reveals that the increased carrier mobility is the result of the reduced values of the hopping distance and the barrier height for hopping.",
author = "Lin, {Yow Jon} and Tsao, {H. Y.}",
year = "2016",
month = "1",
day = "5",
doi = "10.1016/j.mee.2015.09.014",
language = "English",
volume = "149",
pages = "57--61",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Ambient-atmosphere annealing effect on the carrier conduction behavior based on the linear-regime transfer characteristics of pentacene thin film transistors

AU - Lin, Yow Jon

AU - Tsao, H. Y.

PY - 2016/1/5

Y1 - 2016/1/5

N2 - The linear-regime transfer properties of the annealed pentacene-based organic thin film transistors (OTFTs) in air at various temperatures up to 375 K are examined. It is found that the linear-regime carrier mobility increases with increasing annealing temperature reaching a maximum at 350 K, and then decreases with further increasing of annealing temperature beyond that point. However, an increase in annealing temperature leads to the shift of the threshold voltage towards positive gate-source voltages. An analysis through the temperature-dependent transfer characteristics of OTFTs reveals that the increased carrier mobility is the result of the reduced values of the hopping distance and the barrier height for hopping.

AB - The linear-regime transfer properties of the annealed pentacene-based organic thin film transistors (OTFTs) in air at various temperatures up to 375 K are examined. It is found that the linear-regime carrier mobility increases with increasing annealing temperature reaching a maximum at 350 K, and then decreases with further increasing of annealing temperature beyond that point. However, an increase in annealing temperature leads to the shift of the threshold voltage towards positive gate-source voltages. An analysis through the temperature-dependent transfer characteristics of OTFTs reveals that the increased carrier mobility is the result of the reduced values of the hopping distance and the barrier height for hopping.

UR - http://www.scopus.com/inward/record.url?scp=84942807610&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942807610&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2015.09.014

DO - 10.1016/j.mee.2015.09.014

M3 - Article

AN - SCOPUS:84942807610

VL - 149

SP - 57

EP - 61

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -