AlGaN/GaN multiple quantum wells grown by atomic-layer deposition

M. H. Lo, Z. Y. Li, J. R. Chen, T. S. Ko, T. C. Lu, H. C. Kuo, S. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices III
Volume6894
DOIs
Publication statusPublished - 2008 Apr 23
EventSociety of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States
Duration: 2008 Jan 212008 Jan 24

Other

OtherSociety of Photo-Optical Instrumentation Engineers (SPIE)
CountryUnited States
CitySan Jose, CA
Period08-01-2108-01-24

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Semiconductor quantum wells
quantum wells
Surface morphology
Defect density
Organic chemicals
Superlattices
Sapphire
metalorganic chemical vapor deposition
superlattices
Luminescence
periodic variations
Chemical vapor deposition
sapphire
atomic force microscopy
luminescence
Scanning electron microscopy
scanning electron microscopy
defects

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Lo, M. H., Li, Z. Y., Chen, J. R., Ko, T. S., Lu, T. C., Kuo, H. C., & Wang, S. C. (2008). AlGaN/GaN multiple quantum wells grown by atomic-layer deposition. In Gallium Nitride Materials and Devices III (Vol. 6894). [68941V] https://doi.org/10.1117/12.762158
Lo, M. H. ; Li, Z. Y. ; Chen, J. R. ; Ko, T. S. ; Lu, T. C. ; Kuo, H. C. ; Wang, S. C. / AlGaN/GaN multiple quantum wells grown by atomic-layer deposition. Gallium Nitride Materials and Devices III. Vol. 6894 2008.
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Lo, MH, Li, ZY, Chen, JR, Ko, TS, Lu, TC, Kuo, HC & Wang, SC 2008, AlGaN/GaN multiple quantum wells grown by atomic-layer deposition. in Gallium Nitride Materials and Devices III. vol. 6894, 68941V, Society of Photo-Optical Instrumentation Engineers (SPIE), San Jose, CA, United States, 08-01-21. https://doi.org/10.1117/12.762158

AlGaN/GaN multiple quantum wells grown by atomic-layer deposition. / Lo, M. H.; Li, Z. Y.; Chen, J. R.; Ko, T. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

Gallium Nitride Materials and Devices III. Vol. 6894 2008. 68941V.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - AlGaN/GaN multiple quantum wells grown by atomic-layer deposition

AU - Lo, M. H.

AU - Li, Z. Y.

AU - Chen, J. R.

AU - Ko, T. S.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

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N2 - A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.

AB - A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.

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Lo MH, Li ZY, Chen JR, Ko TS, Lu TC, Kuo HC et al. AlGaN/GaN multiple quantum wells grown by atomic-layer deposition. In Gallium Nitride Materials and Devices III. Vol. 6894. 2008. 68941V https://doi.org/10.1117/12.762158