Abstract
A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.
| Original language | English |
|---|---|
| Title of host publication | Gallium Nitride Materials and Devices III |
| Volume | 6894 |
| DOIs | |
| Publication status | Published - 2008 Apr 23 |
| Event | Society of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States Duration: 2008 Jan 21 → 2008 Jan 24 |
Other
| Other | Society of Photo-Optical Instrumentation Engineers (SPIE) |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 08-01-21 → 08-01-24 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics
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AlGaN/GaN multiple quantum wells grown by atomic-layer deposition. / Lo, M. H.; Li, Z. Y.; Chen, J. R.; Ko, T. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.
Gallium Nitride Materials and Devices III. Vol. 6894 2008. 68941V.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - AlGaN/GaN multiple quantum wells grown by atomic-layer deposition
AU - Lo, M. H.
AU - Li, Z. Y.
AU - Chen, J. R.
AU - Ko, T. S.
AU - Lu, T. C.
AU - Kuo, H. C.
AU - Wang, S. C.
PY - 2008/4/23
Y1 - 2008/4/23
N2 - A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.
AB - A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.
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U2 - 10.1117/12.762158
DO - 10.1117/12.762158
M3 - Conference contribution
SN - 9780819470690
VL - 6894
BT - Gallium Nitride Materials and Devices III
ER -