AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

R. H. Horng, D. S. Wuu, S. C. Wei, Man-Fang Huang, K. H. Chang, P. H. Liu, K. C. Lin

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

Original languageEnglish
Pages (from-to)154-156
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number2
DOIs
Publication statusPublished - 1999 Jul 12

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light emitting diodes
wafers
glass
luminance
vapor phase epitaxy
fabrication

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Horng, R. H., Wuu, D. S., Wei, S. C., Huang, M-F., Chang, K. H., Liu, P. H., & Lin, K. C. (1999). AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology. Applied Physics Letters, 75(2), 154-156. https://doi.org/10.1063/1.124303
Horng, R. H. ; Wuu, D. S. ; Wei, S. C. ; Huang, Man-Fang ; Chang, K. H. ; Liu, P. H. ; Lin, K. C. / AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology. In: Applied Physics Letters. 1999 ; Vol. 75, No. 2. pp. 154-156.
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Horng, RH, Wuu, DS, Wei, SC, Huang, M-F, Chang, KH, Liu, PH & Lin, KC 1999, 'AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology', Applied Physics Letters, vol. 75, no. 2, pp. 154-156. https://doi.org/10.1063/1.124303

AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology. / Horng, R. H.; Wuu, D. S.; Wei, S. C.; Huang, Man-Fang; Chang, K. H.; Liu, P. H.; Lin, K. C.

In: Applied Physics Letters, Vol. 75, No. 2, 12.07.1999, p. 154-156.

Research output: Contribution to journalArticle

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AU - Liu, P. H.

AU - Lin, K. C.

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