The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)