Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells

Yen Kuang Kuo, Yu Han Chen, Jih Yuan Chang, Miao Chan Tsai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wavefunctions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.

Original languageEnglish
Pages (from-to)2078-2081
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume209
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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