Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells

Yen Kuang Kuo, Yu Han Chen, Jih Yuan Chang, Miao Chan Tsai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wavefunctions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.

Original languageEnglish
Pages (from-to)2078-2081
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume209
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1

Fingerprint

ultraviolet radiation
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Polarization
polarization
Electrons
Wave functions
high current
Energy gap
injection
output
Ultraviolet Rays
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wavefunctions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.",
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Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells. / Kuo, Yen Kuang; Chen, Yu Han; Chang, Jih Yuan; Tsai, Miao Chan.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 209, No. 10, 01.10.2012, p. 2078-2081.

Research output: Contribution to journalArticle

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