Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers

Yen-Kuang Kuo; Yi An Chang; Han Wei Lin; Jih-Yuan Chang; Shih Hsun Yen; Fang Ming Chen; Yu Han Chen

doi:10.1109/LPT.2012.2228636

Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers

Yen-Kuang Kuo, Yi An Chang, Han Wei Lin, Jih-Yuan Chang, Shih Hsun Yen, Fang Ming Chen, Yu Han Chen

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is achieved by introducing p-type doped (hole concentration=3 × 10 ¹⁷cm^-3) Al_0.2Ga_0.8N barriers in In_0.4Ga_0.6N superlattice solar cell when compared with undoped Al_0.14Ga_0.86N barriers. This improvement is mainly attributed to the increased electric field in the main absorption region, which is beneficial for the holes in the valence band to move towards the p-region. The capability of carrier transport is efficiently improved, thus increasing the carrier-collection efficiency and the conversion efficiency.

Original language	English
Article number	6389786
Pages (from-to)	85-87
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2012.2228636
Publication status	Published - 2013 Jan 2

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2012.2228636

Fingerprint Dive into the research topics of 'Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers'. Together they form a unique fingerprint.

Cite this

Kuo, Y-K., Chang, Y. A., Lin, H. W., Chang, J-Y., Yen, S. H., Chen, F. M., & Chen, Y. H. (2013). Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers. IEEE Photonics Technology Letters, 25(1), 85-87. [6389786]. https://doi.org/10.1109/LPT.2012.2228636

@article{a01d71201a504408ad03506924bee3fb,

title = "Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers",

abstract = "In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is achieved by introducing p-type doped (hole concentration=3 × 10 17cm-3) Al0.2Ga0.8N barriers in In0.4Ga0.6N superlattice solar cell when compared with undoped Al0.14Ga0.86N barriers. This improvement is mainly attributed to the increased electric field in the main absorption region, which is beneficial for the holes in the valence band to move towards the p-region. The capability of carrier transport is efficiently improved, thus increasing the carrier-collection efficiency and the conversion efficiency.",

author = "Yen-Kuang Kuo and Chang, {Yi An} and Lin, {Han Wei} and Jih-Yuan Chang and Yen, {Shih Hsun} and Chen, {Fang Ming} and Chen, {Yu Han}",

year = "2013",

month = jan,

day = "2",

doi = "10.1109/LPT.2012.2228636",

language = "English",

volume = "25",

pages = "85--87",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers

AU - Kuo, Yen-Kuang

AU - Chang, Yi An

AU - Lin, Han Wei

AU - Chang, Jih-Yuan

AU - Yen, Shih Hsun

AU - Chen, Fang Ming

AU - Chen, Yu Han

PY - 2013/1/2

Y1 - 2013/1/2

N2 - In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is achieved by introducing p-type doped (hole concentration=3 × 10 17cm-3) Al0.2Ga0.8N barriers in In0.4Ga0.6N superlattice solar cell when compared with undoped Al0.14Ga0.86N barriers. This improvement is mainly attributed to the increased electric field in the main absorption region, which is beneficial for the holes in the valence band to move towards the p-region. The capability of carrier transport is efficiently improved, thus increasing the carrier-collection efficiency and the conversion efficiency.

AB - In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is achieved by introducing p-type doped (hole concentration=3 × 10 17cm-3) Al0.2Ga0.8N barriers in In0.4Ga0.6N superlattice solar cell when compared with undoped Al0.14Ga0.86N barriers. This improvement is mainly attributed to the increased electric field in the main absorption region, which is beneficial for the holes in the valence band to move towards the p-region. The capability of carrier transport is efficiently improved, thus increasing the carrier-collection efficiency and the conversion efficiency.

UR - http://www.scopus.com/inward/record.url?scp=84871647268&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871647268&partnerID=8YFLogxK

U2 - 10.1109/LPT.2012.2228636

DO - 10.1109/LPT.2012.2228636

M3 - Article

AN - SCOPUS:84871647268

VL - 25

SP - 85

EP - 87

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 1

M1 - 6389786

ER -