Abstract
In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is achieved by introducing p-type doped (hole concentration=3 × 10 17cm-3) Al0.2Ga0.8N barriers in In0.4Ga0.6N superlattice solar cell when compared with undoped Al0.14Ga0.86N barriers. This improvement is mainly attributed to the increased electric field in the main absorption region, which is beneficial for the holes in the valence band to move towards the p-region. The capability of carrier transport is efficiently improved, thus increasing the carrier-collection efficiency and the conversion efficiency.
| Original language | English |
|---|---|
| Article number | 6389786 |
| Pages (from-to) | 85-87 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 25 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 Jan 2 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers. / Kuo, Yen-Kuang; Chang, Yi An; Lin, Han Wei; Chang, Jih-Yuan; Yen, Shih Hsun; Chen, Fang Ming; Chen, Yu Han.
In: IEEE Photonics Technology Letters, Vol. 25, No. 1, 6389786, 02.01.2013, p. 85-87.Research output: Contribution to journal › Article
TY - JOUR
T1 - Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers
AU - Kuo, Yen-Kuang
AU - Chang, Yi An
AU - Lin, Han Wei
AU - Chang, Jih-Yuan
AU - Yen, Shih Hsun
AU - Chen, Fang Ming
AU - Chen, Yu Han
PY - 2013/1/2
Y1 - 2013/1/2
N2 - In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is achieved by introducing p-type doped (hole concentration=3 × 10 17cm-3) Al0.2Ga0.8N barriers in In0.4Ga0.6N superlattice solar cell when compared with undoped Al0.14Ga0.86N barriers. This improvement is mainly attributed to the increased electric field in the main absorption region, which is beneficial for the holes in the valence band to move towards the p-region. The capability of carrier transport is efficiently improved, thus increasing the carrier-collection efficiency and the conversion efficiency.
AB - In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is achieved by introducing p-type doped (hole concentration=3 × 10 17cm-3) Al0.2Ga0.8N barriers in In0.4Ga0.6N superlattice solar cell when compared with undoped Al0.14Ga0.86N barriers. This improvement is mainly attributed to the increased electric field in the main absorption region, which is beneficial for the holes in the valence band to move towards the p-region. The capability of carrier transport is efficiently improved, thus increasing the carrier-collection efficiency and the conversion efficiency.
UR - http://www.scopus.com/inward/record.url?scp=84871647268&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871647268&partnerID=8YFLogxK
U2 - 10.1109/LPT.2012.2228636
DO - 10.1109/LPT.2012.2228636
M3 - Article
AN - SCOPUS:84871647268
VL - 25
SP - 85
EP - 87
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 1
M1 - 6389786
ER -