Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers

Yen Kuang Kuo, Tsun Hsin Wang, Jih Yuan Chang, Miao Chan Tsai

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Abstract

The advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers are studied. The energy band diagrams, carrier concentrations in the quantum wells, radiative recombination rate in the active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results show that the InGaN/GaN-InGaN-GaN light-emitting diode has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams which are favorable for the injection of electrons and holes and uniform distribution of these carriers in the quantum wells.

Original languageEnglish
Article number091107
JournalApplied Physics Letters
Volume99
Issue number9
DOIs
Publication statusPublished - 2011 Aug 29

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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