Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

Yen Kuang Kuo, Jih Yuan Chang, Miao Chan Tsai, Sheng Horng Yen

Research output: Contribution to journalArticlepeer-review

209 Citations (Scopus)


The advantages of blue InGaN light-emitting diodes (LEDs) with InGaN barriers are studied. The L-I curves, carrier concentrations in the quantum wells, energy band diagrams, and internal quantum efficiency are investigated. The simulation results show that the InGaN/InGaN LED has better performance over its conventional InGaN/GaN counterpart due to the enhancement of electron confinement, the reduced polarization effect between the barrier and well, and the lower potential barrier height for the holes to transport in the active region. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by InGaN barriers.

Original languageEnglish
Article number011116
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2009 Jul 20

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers'. Together they form a unique fingerprint.

Cite this