Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

Yen Kuang Kuo; Tsun Hsin Wang; Jih Yuan Chang

doi:10.1063/1.3678341

Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

Yen Kuang Kuo, Tsun Hsin Wang, Jih Yuan Chang

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Abstract

Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN- InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.

Original language	English
Article number	031112
Journal	Applied Physics Letters
Volume	100
Issue number	3
DOIs	https://doi.org/10.1063/1.3678341
Publication status	Published - 2012 Jan 16

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Kuo, Y. K., Wang, T. H., & Chang, J. Y. (2012). Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers. Applied Physics Letters, 100(3), [031112]. https://doi.org/10.1063/1.3678341

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10.1063/1.3678341