Abstract
Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN- InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.
Original language | English |
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Article number | 031112 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2012 Jan 16 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)