Abstract
Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN- InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.
| Original language | English |
|---|---|
| Article number | 031112 |
| Journal | Applied Physics Letters |
| Volume | 100 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2012 Jan 16 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers. / Kuo, Yen Kuang; Wang, Tsun Hsin; Chang, Jih Yuan.
In: Applied Physics Letters, Vol. 100, No. 3, 031112, 16.01.2012.Research output: Contribution to journal › Article
TY - JOUR
T1 - Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers
AU - Kuo, Yen Kuang
AU - Wang, Tsun Hsin
AU - Chang, Jih Yuan
PY - 2012/1/16
Y1 - 2012/1/16
N2 - Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN- InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.
AB - Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN- InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.
UR - http://www.scopus.com/inward/record.url?scp=84863040839&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863040839&partnerID=8YFLogxK
U2 - 10.1063/1.3678341
DO - 10.1063/1.3678341
M3 - Article
AN - SCOPUS:84863040839
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
M1 - 031112
ER -