Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

Yen Kuang Kuo, Tsun Hsin Wang, Jih Yuan Chang

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Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN- InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.

Original languageEnglish
Article number031112
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2012 Jan 16


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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