Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer

Jih-Yuan Chang; Yen-Kuang Kuo

doi:10.1002/pssa.201228764

Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer

Jih-Yuan Chang, Yen-Kuang Kuo

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.

Original language	English
Pages (from-to)	1103-1106
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	210
Issue number	6
DOIs	https://doi.org/10.1002/pssa.201228764
Publication status	Published - 2013 Jun 1

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Chang, J-Y., & Kuo, Y-K. (2013). Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer. Physica Status Solidi (A) Applications and Materials Science, 210(6), 1103-1106. https://doi.org/10.1002/pssa.201228764

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