Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer

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Abstract

Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.

Original languageEnglish
Pages (from-to)1103-1106
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number6
DOIs
Publication statusPublished - 2013 Jun 1

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Light emitting diodes
light emitting diodes
Electrons
Chemical analysis
electrons
Semiconductor quantum wells
Electric properties
Optical properties
electrical properties
quantum wells
injection
optical properties
simulation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.",
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AU - Kuo, Yen-Kuang

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N2 - Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.

AB - Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.

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