Abstract
Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.
| Original language | English |
|---|---|
| Pages (from-to) | 1103-1106 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 210 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2013 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer. / Chang, Jih-Yuan; Kuo, Yen-Kuang.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 6, 01.06.2013, p. 1103-1106.Research output: Contribution to journal › Article
TY - JOUR
T1 - Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer
AU - Chang, Jih-Yuan
AU - Kuo, Yen-Kuang
PY - 2013/6/1
Y1 - 2013/6/1
N2 - Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.
AB - Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.
UR - http://www.scopus.com/inward/record.url?scp=84879233153&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879233153&partnerID=8YFLogxK
U2 - 10.1002/pssa.201228764
DO - 10.1002/pssa.201228764
M3 - Article
AN - SCOPUS:84879233153
VL - 210
SP - 1103
EP - 1106
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 6
ER -