Advantages of blue InGaN light-emitting diodes with AlGaN barriers

Jih-Yuan Chang, Miao Chan Tsai, Yen-Kuang Kuo

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Abstract

The advantages of blue InGaN light-emitting diodes (LEDs) with AlGaN barriers are studied numerically. The performance curves, energy band diagrams, electrostatic fields, and carrier concentrations are investigated. The simulation results show that the InGaN/AlGaN LED has better performance than its conventional InGaN/GaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by AlGaN barriers.

Original languageEnglish
Pages (from-to)1368-1370
Number of pages3
JournalOptics Letters
Volume35
Issue number9
DOIs
Publication statusPublished - 2010 May 1

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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