Activation mechanism of annealed Mg-doped GaN in air

Yow-Jon Lin

doi:10.1063/1.1704873

Activation mechanism of annealed Mg-doped GaN in air

Yow-Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article

28 Citations (Scopus)

Abstract

The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of Mg_Ga-H, and the formation of V_GaH₂ and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

Original language	English
Pages (from-to)	2760-2762
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	15
DOIs	https://doi.org/10.1063/1.1704873
Publication status	Published - 2004 Apr 12

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Lin, Y-J. (2004). Activation mechanism of annealed Mg-doped GaN in air. Applied Physics Letters, 84(15), 2760-2762. https://doi.org/10.1063/1.1704873

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Access to Document

10.1063/1.1704873