Activation mechanism of annealed Mg-doped GaN in air

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Abstract

The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

Original languageEnglish
Pages (from-to)2760-2762
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number15
DOIs
Publication statusPublished - 2004 Apr 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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