Activation mechanism of annealed Mg-doped GaN in air

Yow-Jon Lin

Research output: Contribution to journal › Article

28 Citations (Scopus)

Abstract

The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

Original languageEnglish
Pages (from-to)2760-2762
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number15
DOIs
Publication statusPublished - 2004 Apr 12

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activation
air
gallium
interstitials
desorption
dissociation
hydrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, Yow-Jon. / Activation mechanism of annealed Mg-doped GaN in air. In: Applied Physics Letters. 2004 ; Vol. 84, No. 15. pp. 2760-2762.
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Lin, Y-J 2004, 'Activation mechanism of annealed Mg-doped GaN in air', Applied Physics Letters, vol. 84, no. 15, pp. 2760-2762. https://doi.org/10.1063/1.1704873

Activation mechanism of annealed Mg-doped GaN in air. / Lin, Yow-Jon.

In: Applied Physics Letters, Vol. 84, No. 15, 12.04.2004, p. 2760-2762.

Research output: Contribution to journal › Article

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N2 - The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

AB - The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

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Lin Y-J. Activation mechanism of annealed Mg-doped GaN in air. Applied Physics Letters. 2004 Apr 12;84(15):2760-2762. https://doi.org/10.1063/1.1704873

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