Activation mechanism of annealed Mg-doped GaN in air

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

Original languageEnglish
Pages (from-to)2760-2762
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number15
DOIs
Publication statusPublished - 2004 Apr 12

Fingerprint

activation
air
gallium
interstitials
desorption
dissociation
hydrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{6f8b6a62a91a44a596b1b5aed0b0ed12,
title = "Activation mechanism of annealed Mg-doped GaN in air",
abstract = "The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.",
author = "Yow-Jon Lin",
year = "2004",
month = "4",
day = "12",
doi = "10.1063/1.1704873",
language = "English",
volume = "84",
pages = "2760--2762",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

Activation mechanism of annealed Mg-doped GaN in air. / Lin, Yow-Jon.

In: Applied Physics Letters, Vol. 84, No. 15, 12.04.2004, p. 2760-2762.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Activation mechanism of annealed Mg-doped GaN in air

AU - Lin, Yow-Jon

PY - 2004/4/12

Y1 - 2004/4/12

N2 - The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

AB - The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

UR - http://www.scopus.com/inward/record.url?scp=2342570977&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342570977&partnerID=8YFLogxK

U2 - 10.1063/1.1704873

DO - 10.1063/1.1704873

M3 - Article

AN - SCOPUS:2342570977

VL - 84

SP - 2760

EP - 2762

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -