Activation mechanism of annealed Mg-doped GaN in air

Yow-Jon Lin

doi:10.1063/1.1704873

Activation mechanism of annealed Mg-doped GaN in air

Yow-Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of Mg_Ga-H, and the formation of V_GaH₂ and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

Original language	English
Pages (from-to)	2760-2762
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	15
DOIs	https://doi.org/10.1063/1.1704873
Publication status	Published - 2004 Apr 12

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{6f8b6a62a91a44a596b1b5aed0b0ed12,

title = "Activation mechanism of annealed Mg-doped GaN in air",

abstract = "The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.",

author = "Yow-Jon Lin",

year = "2004",

month = apr,

day = "12",

doi = "10.1063/1.1704873",

language = "English",

volume = "84",

pages = "2760--2762",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Activation mechanism of annealed Mg-doped GaN in air

AU - Lin, Yow-Jon

PY - 2004/4/12

Y1 - 2004/4/12

N2 - The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

AB - The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

UR - http://www.scopus.com/inward/record.url?scp=2342570977&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342570977&partnerID=8YFLogxK

U2 - 10.1063/1.1704873

DO - 10.1063/1.1704873

M3 - Article

AN - SCOPUS:2342570977

VL - 84

SP - 2760

EP - 2762

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -