Abstract
The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.
| Original language | English |
|---|---|
| Pages (from-to) | 2760-2762 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2004 Apr 12 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Cite this
Lin, Y-J. (2004). Activation mechanism of annealed Mg-doped GaN in air. Applied Physics Letters, 84(15), 2760-2762. https://doi.org/10.1063/1.1704873