Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropie biaxial strain: Compression along [110] and tension along [110]

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Abstract

We report theoretical studies on the optical absorption anisotropy for excitonic transitions in lattice-matched GaAs/AlGaAs multiple quantum well (MQW) structures under simultaneous compression and tension applied along the [110] and [1̄10] directions of the MQW, respectively. The analyses are based on a model that includes both the 4 × 4 k · p Hamiltonian and the strain Hamiltonian. The wave functions, found by solving the eigenvalue equations, are used to calculate the dipole matrix elements for excitonic transitions and evaluate the anisotropic absorption properties. The effect of variation of parameters such as well width and barrier height on the performance of the strained GaAs/AlGaAs MQW electroabsorption modulators is discussed.

Original languageEnglish
Pages (from-to)1776-1781
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number4 A
Publication statusPublished - 2000 Dec 1

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Semiconductor quantum wells
aluminum gallium arsenides
Hamiltonians
Anisotropy
quantum wells
anisotropy
Electroabsorption modulators
Wave functions
Electron transitions
Light absorption
modulators
optical absorption
eigenvalues
wave functions
dipoles
matrices

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropie biaxial strain: Compression along [110] and tension along [110]",
abstract = "We report theoretical studies on the optical absorption anisotropy for excitonic transitions in lattice-matched GaAs/AlGaAs multiple quantum well (MQW) structures under simultaneous compression and tension applied along the [110] and [1̄10] directions of the MQW, respectively. The analyses are based on a model that includes both the 4 × 4 k · p Hamiltonian and the strain Hamiltonian. The wave functions, found by solving the eigenvalue equations, are used to calculate the dipole matrix elements for excitonic transitions and evaluate the anisotropic absorption properties. The effect of variation of parameters such as well width and barrier height on the performance of the strained GaAs/AlGaAs MQW electroabsorption modulators is discussed.",
author = "Man-Fang Huang and Elsa Garmire and Yen-Kuang Kuo",
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T2 - Compression along [110] and tension along [110]

AU - Huang, Man-Fang

AU - Garmire, Elsa

AU - Kuo, Yen-Kuang

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N2 - We report theoretical studies on the optical absorption anisotropy for excitonic transitions in lattice-matched GaAs/AlGaAs multiple quantum well (MQW) structures under simultaneous compression and tension applied along the [110] and [1̄10] directions of the MQW, respectively. The analyses are based on a model that includes both the 4 × 4 k · p Hamiltonian and the strain Hamiltonian. The wave functions, found by solving the eigenvalue equations, are used to calculate the dipole matrix elements for excitonic transitions and evaluate the anisotropic absorption properties. The effect of variation of parameters such as well width and barrier height on the performance of the strained GaAs/AlGaAs MQW electroabsorption modulators is discussed.

AB - We report theoretical studies on the optical absorption anisotropy for excitonic transitions in lattice-matched GaAs/AlGaAs multiple quantum well (MQW) structures under simultaneous compression and tension applied along the [110] and [1̄10] directions of the MQW, respectively. The analyses are based on a model that includes both the 4 × 4 k · p Hamiltonian and the strain Hamiltonian. The wave functions, found by solving the eigenvalue equations, are used to calculate the dipole matrix elements for excitonic transitions and evaluate the anisotropic absorption properties. The effect of variation of parameters such as well width and barrier height on the performance of the strained GaAs/AlGaAs MQW electroabsorption modulators is discussed.

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