Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance

J. C. Fan, Y. F. Chen, D. Y. Lin, Y. S. Huang, M. C. Chen, H. H. Lin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.

Original languageEnglish
Pages (from-to)1460-1462
Number of pages3
JournalJournal of Applied Physics
Volume86
Issue number3
DOIs
Publication statusPublished - 1999 Aug

Fingerprint

photoconductivity
aluminum gallium arsenides
superlattices
barrier layers
energy
interference
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Fan, J. C. ; Chen, Y. F. ; Lin, D. Y. ; Huang, Y. S. ; Chen, M. C. ; Lin, H. H. / Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance. In: Journal of Applied Physics. 1999 ; Vol. 86, No. 3. pp. 1460-1462.
@article{95c80f37e1d04255a53ffc060db1d688,
title = "Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance",
abstract = "The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.",
author = "Fan, {J. C.} and Chen, {Y. F.} and Lin, {D. Y.} and Huang, {Y. S.} and Chen, {M. C.} and Lin, {H. H.}",
year = "1999",
month = "8",
doi = "10.1063/1.370965",
language = "English",
volume = "86",
pages = "1460--1462",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance. / Fan, J. C.; Chen, Y. F.; Lin, D. Y.; Huang, Y. S.; Chen, M. C.; Lin, H. H.

In: Journal of Applied Physics, Vol. 86, No. 3, 08.1999, p. 1460-1462.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance

AU - Fan, J. C.

AU - Chen, Y. F.

AU - Lin, D. Y.

AU - Huang, Y. S.

AU - Chen, M. C.

AU - Lin, H. H.

PY - 1999/8

Y1 - 1999/8

N2 - The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.

AB - The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.

UR - http://www.scopus.com/inward/record.url?scp=0032621308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032621308&partnerID=8YFLogxK

U2 - 10.1063/1.370965

DO - 10.1063/1.370965

M3 - Article

AN - SCOPUS:0032621308

VL - 86

SP - 1460

EP - 1462

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -