Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance

J. C. Fan; Y. F. Chen; D. Y. Lin; Y. S. Huang; M. C. Chen; H. H. Lin

doi:10.1063/1.370965

Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance

J. C. Fan, Y. F. Chen, D. Y. Lin, Y. S. Huang, M. C. Chen, H. H. Lin

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.

Original language	English
Pages (from-to)	1460-1462
Number of pages	3
Journal	Journal of Applied Physics
Volume	86
Issue number	3
DOIs	https://doi.org/10.1063/1.370965
Publication status	Published - 1999 Aug

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance",

abstract = "The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.",

author = "Fan, {J. C.} and Chen, {Y. F.} and Lin, {D. Y.} and Huang, {Y. S.} and Chen, {M. C.} and Lin, {H. H.}",

year = "1999",

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volume = "86",

pages = "1460--1462",

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T1 - Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance

AU - Fan, J. C.

AU - Chen, Y. F.

AU - Lin, D. Y.

AU - Huang, Y. S.

AU - Chen, M. C.

AU - Lin, H. H.

PY - 1999/8

Y1 - 1999/8

N2 - The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.

AB - The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.

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