Abstract
The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.
| Original language | English |
|---|---|
| Pages (from-to) | 1460-1462 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 86 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1999 Aug |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance. / Fan, J. C.; Chen, Y. F.; Lin, D. Y.; Huang, Y. S.; Chen, M. C.; Lin, H. H.
In: Journal of Applied Physics, Vol. 86, No. 3, 08.1999, p. 1460-1462.Research output: Contribution to journal › Article
TY - JOUR
T1 - Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance
AU - Fan, J. C.
AU - Chen, Y. F.
AU - Lin, D. Y.
AU - Huang, Y. S.
AU - Chen, M. C.
AU - Lin, H. H.
PY - 1999/8
Y1 - 1999/8
N2 - The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.
AB - The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy.
UR - http://www.scopus.com/inward/record.url?scp=0032621308&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032621308&partnerID=8YFLogxK
U2 - 10.1063/1.370965
DO - 10.1063/1.370965
M3 - Article
AN - SCOPUS:0032621308
VL - 86
SP - 1460
EP - 1462
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 3
ER -