Abnormal blue shift of InGaN micro-size light emitting diodes

Bao Jen Pong, Chi Hsing Chen, Sheng Horng Yen, Jin Fu Hsu, Chun Ju Tun, Yen-Kuang Kuo, Cheng Huang Kuo, Gou Chung Chi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Blue InGaN micro-size light emitting diodes (LEDs) with diameters from 3 to 70 μm have been fabricated. An ion implantation technique and a 12 μm electro-ridge were used to simplify the fabrication processes. The 3-70 μm LEDs exhibiting a large emission of photon blue shift (40-240 meV) were observed in electro-luminescence (EL) spectra. The dependence of the blue shift on size is studied. The characteristics of the micro-size LEDs are also investigated numerically with the use of an advanced physical model of semiconductor devices (APSYS). The experimental measurements and simulation results are in close agreement for maximum blue shift. Base on the simulation, the difference between blue shift caused by band filling effect and red shift caused by lateral carrier confinement are approximately the same. Hence, the maximum blue shift increases when the size of micro-size LED increases because of decreased red shift resulted from thermal effect.

Original languageEnglish
Pages (from-to)1588-1594
Number of pages7
JournalSolid-State Electronics
Volume50
Issue number9-10
DOIs
Publication statusPublished - 2006 Sep 1

Fingerprint

blue shift
Light emitting diodes
light emitting diodes
red shift
Electroluminescence
Semiconductor devices
Ion implantation
Thermal effects
semiconductor devices
Photons
electroluminescence
temperature effects
ion implantation
ridges
Fabrication
simulation
fabrication
shift
photons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Pong, B. J., Chen, C. H., Yen, S. H., Hsu, J. F., Tun, C. J., Kuo, Y-K., ... Chi, G. C. (2006). Abnormal blue shift of InGaN micro-size light emitting diodes. Solid-State Electronics, 50(9-10), 1588-1594. https://doi.org/10.1016/j.sse.2006.07.011
Pong, Bao Jen ; Chen, Chi Hsing ; Yen, Sheng Horng ; Hsu, Jin Fu ; Tun, Chun Ju ; Kuo, Yen-Kuang ; Kuo, Cheng Huang ; Chi, Gou Chung. / Abnormal blue shift of InGaN micro-size light emitting diodes. In: Solid-State Electronics. 2006 ; Vol. 50, No. 9-10. pp. 1588-1594.
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Pong, BJ, Chen, CH, Yen, SH, Hsu, JF, Tun, CJ, Kuo, Y-K, Kuo, CH & Chi, GC 2006, 'Abnormal blue shift of InGaN micro-size light emitting diodes', Solid-State Electronics, vol. 50, no. 9-10, pp. 1588-1594. https://doi.org/10.1016/j.sse.2006.07.011

Abnormal blue shift of InGaN micro-size light emitting diodes. / Pong, Bao Jen; Chen, Chi Hsing; Yen, Sheng Horng; Hsu, Jin Fu; Tun, Chun Ju; Kuo, Yen-Kuang; Kuo, Cheng Huang; Chi, Gou Chung.

In: Solid-State Electronics, Vol. 50, No. 9-10, 01.09.2006, p. 1588-1594.

Research output: Contribution to journalArticle

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AU - Pong, Bao Jen

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AU - Yen, Sheng Horng

AU - Hsu, Jin Fu

AU - Tun, Chun Ju

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AU - Kuo, Cheng Huang

AU - Chi, Gou Chung

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AB - Blue InGaN micro-size light emitting diodes (LEDs) with diameters from 3 to 70 μm have been fabricated. An ion implantation technique and a 12 μm electro-ridge were used to simplify the fabrication processes. The 3-70 μm LEDs exhibiting a large emission of photon blue shift (40-240 meV) were observed in electro-luminescence (EL) spectra. The dependence of the blue shift on size is studied. The characteristics of the micro-size LEDs are also investigated numerically with the use of an advanced physical model of semiconductor devices (APSYS). The experimental measurements and simulation results are in close agreement for maximum blue shift. Base on the simulation, the difference between blue shift caused by band filling effect and red shift caused by lateral carrier confinement are approximately the same. Hence, the maximum blue shift increases when the size of micro-size LED increases because of decreased red shift resulted from thermal effect.

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