A thermopile device with subwavelength structure by CMOS-MEMS technology

Chih Hsiung Shen, Yun Ying Yeh, Chi Feng Chen

Research output: Contribution to journalArticle

Abstract

Besides the application of the photonic crystal for the photodetector in the visible range, the infrared devices proposed with subwavelength structure are numerically and experimentally investigated thoroughly for infrared radiation sensing in this research. Several complementary metal oxide semiconductor (CMOS) compatible thermopiles with subwavelength structure (SWS) are proposed and simulated by the FDTD method. The proposed thermopiles are fabricated by the 0.35 μm 2P4M CMOS-MEMS process in TSMC (Taiwan Semiconductor Manufacturing Company). The measurement and simulation results show that the response of these devices with SWS is higher than for those without SWS. The trend of the measurement results is consistent with that of the simulation results. Obviously, the absorption effciency of the CMOS compatible thermopile can be enhanced when the subwavelength structure exists.

Original languageEnglish
Article number5118
JournalApplied Sciences (Switzerland)
Volume9
Issue number23
DOIs
Publication statusPublished - 2019 Dec 1

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Thermopiles
thermopiles
microelectromechanical systems
MEMS
CMOS
Metals
Infrared devices
infrared radiation
Taiwan
Photodetectors
Photonic crystals
finite difference time domain method
photometers
manufacturing
simulation
photonics
Semiconductor materials
Infrared radiation
trends
crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Instrumentation
  • Engineering(all)
  • Process Chemistry and Technology
  • Computer Science Applications
  • Fluid Flow and Transfer Processes

Cite this

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abstract = "Besides the application of the photonic crystal for the photodetector in the visible range, the infrared devices proposed with subwavelength structure are numerically and experimentally investigated thoroughly for infrared radiation sensing in this research. Several complementary metal oxide semiconductor (CMOS) compatible thermopiles with subwavelength structure (SWS) are proposed and simulated by the FDTD method. The proposed thermopiles are fabricated by the 0.35 μm 2P4M CMOS-MEMS process in TSMC (Taiwan Semiconductor Manufacturing Company). The measurement and simulation results show that the response of these devices with SWS is higher than for those without SWS. The trend of the measurement results is consistent with that of the simulation results. Obviously, the absorption effciency of the CMOS compatible thermopile can be enhanced when the subwavelength structure exists.",
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A thermopile device with subwavelength structure by CMOS-MEMS technology. / Shen, Chih Hsiung; Yeh, Yun Ying; Chen, Chi Feng.

In: Applied Sciences (Switzerland), Vol. 9, No. 23, 5118, 01.12.2019.

Research output: Contribution to journalArticle

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