A temperature-stable CMOS voltage reference

Zhi-Ming Lin; Kuei Chen Huang

A temperature-stable CMOS voltage reference

Department of Computer Science and Information Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

A CMOS voltage reference which employ a supply-independent bias circuit and a temperature-compensation circuit has been developed that exhibits extremely low drift with power supply and temperature. The simulated output voltage drift is less than 20 μ V/°C (13 ppm/°C) and 4.8 mV/V for supply voltage between 12 V and 16 V and temperature ranging from 25°C to +125°C.

Original language	English
Title of host publication	Advances in Physics, Electronics and Signal Processing Applications
Publisher	World Scientific and Engineering Academy and Society
Pages	111-113
Number of pages	3
ISBN (Print)	9608052173
Publication status	Published - 2000 Dec 1

All Science Journal Classification (ASJC) codes

Engineering(all)

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title = "A temperature-stable CMOS voltage reference",

abstract = "A CMOS voltage reference which employ a supply-independent bias circuit and a temperature-compensation circuit has been developed that exhibits extremely low drift with power supply and temperature. The simulated output voltage drift is less than 20 μ V/°C (13 ppm/°C) and 4.8 mV/V for supply voltage between 12 V and 16 V and temperature ranging from 25°C to +125°C.",

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AB - A CMOS voltage reference which employ a supply-independent bias circuit and a temperature-compensation circuit has been developed that exhibits extremely low drift with power supply and temperature. The simulated output voltage drift is less than 20 μ V/°C (13 ppm/°C) and 4.8 mV/V for supply voltage between 12 V and 16 V and temperature ranging from 25°C to +125°C.

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