A study on the bonding conditions and mechanism for glass-to-glass anodic bonding in field emission display

W. T. Yen, Y. C. Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Here we have investigated the bonding conditions and mechanism for glass-to-glass anodic bonding in indium-tin-oxide (ITO)-coated glass using an Al/Cr composite thin film as an interlayer prepared by RF magnetron sputtering. The experimental results show that the bond strength increases with increasing the bonding temperature, bonding voltage, and Al film thickness. The optimum experimental parameters in the anodic bonding were found to be an Al film thickness of 300 nm, bonding temperature of 300°C, and bonding voltage of 700 V. Oxygen content within the bonded interphase increases and aluminum content decreases on increasing both the temperature and voltage during the bonding process. According to EDS analysis results, the main bond mechanism is proposed to be due to the following chemical reactions: 4Na+ + 4e- → 4Na, xAl + yO2- → Al x O y + 6e-, x = 2, y = 3.

Original languageEnglish
Pages (from-to)151-162
Number of pages12
JournalJournal of Adhesion Science and Technology
Volume23
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

Fingerprint

Field emission displays
field emission
Glass
glass
Film thickness
Electric potential
electric potential
film thickness
Bond strength (materials)
Composite films
Tin oxides
Aluminum
indium oxides
Magnetron sputtering
Indium
Temperature
tin oxides
temperature
Energy dispersive spectroscopy
Chemical reactions

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{8dca3d50fa7344ac9fe097c998ef67f1,
title = "A study on the bonding conditions and mechanism for glass-to-glass anodic bonding in field emission display",
abstract = "Here we have investigated the bonding conditions and mechanism for glass-to-glass anodic bonding in indium-tin-oxide (ITO)-coated glass using an Al/Cr composite thin film as an interlayer prepared by RF magnetron sputtering. The experimental results show that the bond strength increases with increasing the bonding temperature, bonding voltage, and Al film thickness. The optimum experimental parameters in the anodic bonding were found to be an Al film thickness of 300 nm, bonding temperature of 300°C, and bonding voltage of 700 V. Oxygen content within the bonded interphase increases and aluminum content decreases on increasing both the temperature and voltage during the bonding process. According to EDS analysis results, the main bond mechanism is proposed to be due to the following chemical reactions: 4Na+ + 4e- → 4Na, xAl + yO2- → Al x O y + 6e-, x = 2, y = 3.",
author = "Yen, {W. T.} and Lin, {Y. C.}",
year = "2009",
month = "1",
day = "1",
doi = "10.1163/156856108X344577",
language = "English",
volume = "23",
pages = "151--162",
journal = "Journal of Adhesion Science and Technology",
issn = "0169-4243",
publisher = "Taylor and Francis Ltd.",
number = "1",

}

A study on the bonding conditions and mechanism for glass-to-glass anodic bonding in field emission display. / Yen, W. T.; Lin, Y. C.

In: Journal of Adhesion Science and Technology, Vol. 23, No. 1, 01.01.2009, p. 151-162.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A study on the bonding conditions and mechanism for glass-to-glass anodic bonding in field emission display

AU - Yen, W. T.

AU - Lin, Y. C.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Here we have investigated the bonding conditions and mechanism for glass-to-glass anodic bonding in indium-tin-oxide (ITO)-coated glass using an Al/Cr composite thin film as an interlayer prepared by RF magnetron sputtering. The experimental results show that the bond strength increases with increasing the bonding temperature, bonding voltage, and Al film thickness. The optimum experimental parameters in the anodic bonding were found to be an Al film thickness of 300 nm, bonding temperature of 300°C, and bonding voltage of 700 V. Oxygen content within the bonded interphase increases and aluminum content decreases on increasing both the temperature and voltage during the bonding process. According to EDS analysis results, the main bond mechanism is proposed to be due to the following chemical reactions: 4Na+ + 4e- → 4Na, xAl + yO2- → Al x O y + 6e-, x = 2, y = 3.

AB - Here we have investigated the bonding conditions and mechanism for glass-to-glass anodic bonding in indium-tin-oxide (ITO)-coated glass using an Al/Cr composite thin film as an interlayer prepared by RF magnetron sputtering. The experimental results show that the bond strength increases with increasing the bonding temperature, bonding voltage, and Al film thickness. The optimum experimental parameters in the anodic bonding were found to be an Al film thickness of 300 nm, bonding temperature of 300°C, and bonding voltage of 700 V. Oxygen content within the bonded interphase increases and aluminum content decreases on increasing both the temperature and voltage during the bonding process. According to EDS analysis results, the main bond mechanism is proposed to be due to the following chemical reactions: 4Na+ + 4e- → 4Na, xAl + yO2- → Al x O y + 6e-, x = 2, y = 3.

UR - http://www.scopus.com/inward/record.url?scp=68949112543&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68949112543&partnerID=8YFLogxK

U2 - 10.1163/156856108X344577

DO - 10.1163/156856108X344577

M3 - Article

AN - SCOPUS:68949112543

VL - 23

SP - 151

EP - 162

JO - Journal of Adhesion Science and Technology

JF - Journal of Adhesion Science and Technology

SN - 0169-4243

IS - 1

ER -