A study on MoSe2 layer of Mo contact in Cu(In,Ga)Se2 thin film solar cells

Yi Cheng Lin, Ming Tsung Shen, Yung Lin Chen, Hung Ru Hsu, Cheng Han Wu

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

This study investigated the influence of sputtering power and selenization on the thickness of the MoSe2, as it relates to the performance of Cu(In,Ga)Se2 (CIGS) thin film solar cells with a structure of glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al. When the sputtering power exceeded 200 W (power density of 4.4 W/mm2) or the selenization temperature exceeded 773 K, the MoSe2 layer underwent a significant increase in thickness. The use of higher sputtering power to deposit the Mo contact resulted in superior Mo crystals and facilitated the formation of MoSe2 layers with hexagonal close-packed crystal structure during the selenization process. The thickness of the MoSe2 layer did not increase with soaking time during selenization. The highest device efficiency was obtained when the thickness of the MoSe2 layer was 240 nm.

Original languageEnglish
Pages (from-to)166-171
Number of pages6
JournalThin Solid Films
Volume570
Issue numberPB
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Sputtering
solar cells
sputtering
thin films
soaking
Deposits
Crystal structure
radiant flux density
Glass
Crystals
deposits
crystal structure
Thin film solar cells
glass
crystals
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lin, Yi Cheng ; Shen, Ming Tsung ; Chen, Yung Lin ; Hsu, Hung Ru ; Wu, Cheng Han. / A study on MoSe2 layer of Mo contact in Cu(In,Ga)Se2 thin film solar cells. In: Thin Solid Films. 2014 ; Vol. 570, No. PB. pp. 166-171.
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abstract = "This study investigated the influence of sputtering power and selenization on the thickness of the MoSe2, as it relates to the performance of Cu(In,Ga)Se2 (CIGS) thin film solar cells with a structure of glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al. When the sputtering power exceeded 200 W (power density of 4.4 W/mm2) or the selenization temperature exceeded 773 K, the MoSe2 layer underwent a significant increase in thickness. The use of higher sputtering power to deposit the Mo contact resulted in superior Mo crystals and facilitated the formation of MoSe2 layers with hexagonal close-packed crystal structure during the selenization process. The thickness of the MoSe2 layer did not increase with soaking time during selenization. The highest device efficiency was obtained when the thickness of the MoSe2 layer was 240 nm.",
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A study on MoSe2 layer of Mo contact in Cu(In,Ga)Se2 thin film solar cells. / Lin, Yi Cheng; Shen, Ming Tsung; Chen, Yung Lin; Hsu, Hung Ru; Wu, Cheng Han.

In: Thin Solid Films, Vol. 570, No. PB, 01.01.2014, p. 166-171.

Research output: Contribution to journalArticle

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AB - This study investigated the influence of sputtering power and selenization on the thickness of the MoSe2, as it relates to the performance of Cu(In,Ga)Se2 (CIGS) thin film solar cells with a structure of glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al. When the sputtering power exceeded 200 W (power density of 4.4 W/mm2) or the selenization temperature exceeded 773 K, the MoSe2 layer underwent a significant increase in thickness. The use of higher sputtering power to deposit the Mo contact resulted in superior Mo crystals and facilitated the formation of MoSe2 layers with hexagonal close-packed crystal structure during the selenization process. The thickness of the MoSe2 layer did not increase with soaking time during selenization. The highest device efficiency was obtained when the thickness of the MoSe2 layer was 240 nm.

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