A patterning technique of lead zirconate titanate thin film by ultraviolet-light

Chia Che Wu, Chun Hung Hsueh, Ya Ting Chang, Chueh Tang Chang, Kuan-Jung Chung

Research output: Contribution to journalArticle

Abstract

The patterning technique of Pb(Zr, Ti)O3 (PZT) thin film is an essential process in device fabrication processes for application in microsensors and microactuators. In this paper, a novel pattern technique is proposed for PZT thin film by UV photolysis processes. PZT thin films were first spin coated on the substrate and exposed by UV light for photolysis step. The UV photolysis step defined exposed and unexposed area by mask, and the pattern will be transferred to PZT thin film. After photolysis, PZT films were placed in non-ionic surfactant to remove unexposed area. Finally, PZT films were sintered at 650 C in the furnace for crystallization. Experimental results showed that remnant polarization of patterned PZT film by UV photolysis was 21.4 μc cm-2, which was compared to 17.24 μc cm-2 by hot plate prolysis. Coercive fields were 45 and 104 kV cm-1 by UV photolysis and hot plate prolysis, respectively. Dielectric loss was 0.027 by UV photolysis which was much smaller than 0.043 by hot plate prolysis. PZT thin films patterned by UV photolysis showed satisfactory geometries.

Original languageEnglish
Pages (from-to)853-859
Number of pages7
JournalMicrosystem Technologies
Volume19
Issue number6
DOIs
Publication statusPublished - 2013 Jun 1

Fingerprint

Photolysis
ultraviolet radiation
photolysis
Thin films
thin films
Microactuators
Microsensors
Ultraviolet Rays
lead titanate zirconate
Nonionic surfactants
Dielectric losses
Crystallization
dielectric loss
Ultraviolet radiation
furnaces
Masks
Furnaces
masks
surfactants
crystallization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Wu, Chia Che ; Hsueh, Chun Hung ; Chang, Ya Ting ; Chang, Chueh Tang ; Chung, Kuan-Jung. / A patterning technique of lead zirconate titanate thin film by ultraviolet-light. In: Microsystem Technologies. 2013 ; Vol. 19, No. 6. pp. 853-859.
@article{1c9546de63684f0f883637a2b5b1e208,
title = "A patterning technique of lead zirconate titanate thin film by ultraviolet-light",
abstract = "The patterning technique of Pb(Zr, Ti)O3 (PZT) thin film is an essential process in device fabrication processes for application in microsensors and microactuators. In this paper, a novel pattern technique is proposed for PZT thin film by UV photolysis processes. PZT thin films were first spin coated on the substrate and exposed by UV light for photolysis step. The UV photolysis step defined exposed and unexposed area by mask, and the pattern will be transferred to PZT thin film. After photolysis, PZT films were placed in non-ionic surfactant to remove unexposed area. Finally, PZT films were sintered at 650 C in the furnace for crystallization. Experimental results showed that remnant polarization of patterned PZT film by UV photolysis was 21.4 μc cm-2, which was compared to 17.24 μc cm-2 by hot plate prolysis. Coercive fields were 45 and 104 kV cm-1 by UV photolysis and hot plate prolysis, respectively. Dielectric loss was 0.027 by UV photolysis which was much smaller than 0.043 by hot plate prolysis. PZT thin films patterned by UV photolysis showed satisfactory geometries.",
author = "Wu, {Chia Che} and Hsueh, {Chun Hung} and Chang, {Ya Ting} and Chang, {Chueh Tang} and Kuan-Jung Chung",
year = "2013",
month = "6",
day = "1",
doi = "10.1007/s00542-013-1750-y",
language = "English",
volume = "19",
pages = "853--859",
journal = "Microsystem Technologies",
issn = "0946-7076",
publisher = "Springer Verlag",
number = "6",

}

A patterning technique of lead zirconate titanate thin film by ultraviolet-light. / Wu, Chia Che; Hsueh, Chun Hung; Chang, Ya Ting; Chang, Chueh Tang; Chung, Kuan-Jung.

In: Microsystem Technologies, Vol. 19, No. 6, 01.06.2013, p. 853-859.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A patterning technique of lead zirconate titanate thin film by ultraviolet-light

AU - Wu, Chia Che

AU - Hsueh, Chun Hung

AU - Chang, Ya Ting

AU - Chang, Chueh Tang

AU - Chung, Kuan-Jung

PY - 2013/6/1

Y1 - 2013/6/1

N2 - The patterning technique of Pb(Zr, Ti)O3 (PZT) thin film is an essential process in device fabrication processes for application in microsensors and microactuators. In this paper, a novel pattern technique is proposed for PZT thin film by UV photolysis processes. PZT thin films were first spin coated on the substrate and exposed by UV light for photolysis step. The UV photolysis step defined exposed and unexposed area by mask, and the pattern will be transferred to PZT thin film. After photolysis, PZT films were placed in non-ionic surfactant to remove unexposed area. Finally, PZT films were sintered at 650 C in the furnace for crystallization. Experimental results showed that remnant polarization of patterned PZT film by UV photolysis was 21.4 μc cm-2, which was compared to 17.24 μc cm-2 by hot plate prolysis. Coercive fields were 45 and 104 kV cm-1 by UV photolysis and hot plate prolysis, respectively. Dielectric loss was 0.027 by UV photolysis which was much smaller than 0.043 by hot plate prolysis. PZT thin films patterned by UV photolysis showed satisfactory geometries.

AB - The patterning technique of Pb(Zr, Ti)O3 (PZT) thin film is an essential process in device fabrication processes for application in microsensors and microactuators. In this paper, a novel pattern technique is proposed for PZT thin film by UV photolysis processes. PZT thin films were first spin coated on the substrate and exposed by UV light for photolysis step. The UV photolysis step defined exposed and unexposed area by mask, and the pattern will be transferred to PZT thin film. After photolysis, PZT films were placed in non-ionic surfactant to remove unexposed area. Finally, PZT films were sintered at 650 C in the furnace for crystallization. Experimental results showed that remnant polarization of patterned PZT film by UV photolysis was 21.4 μc cm-2, which was compared to 17.24 μc cm-2 by hot plate prolysis. Coercive fields were 45 and 104 kV cm-1 by UV photolysis and hot plate prolysis, respectively. Dielectric loss was 0.027 by UV photolysis which was much smaller than 0.043 by hot plate prolysis. PZT thin films patterned by UV photolysis showed satisfactory geometries.

UR - http://www.scopus.com/inward/record.url?scp=84879081867&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879081867&partnerID=8YFLogxK

U2 - 10.1007/s00542-013-1750-y

DO - 10.1007/s00542-013-1750-y

M3 - Article

AN - SCOPUS:84879081867

VL - 19

SP - 853

EP - 859

JO - Microsystem Technologies

JF - Microsystem Technologies

SN - 0946-7076

IS - 6

ER -