A numerical study of dc characteristics of HEMT with p-type δ-doped barrier

Y. Chang, Yen-Kuang Kuo

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The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type δ-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application.

Original languageEnglish
Pages (from-to)877-879
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Issue number4
Publication statusPublished - 2005 Sep 1


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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