A numerical study of dc characteristics of HEMT with p-type δ-doped barrier

Y. Chang, Yen-Kuang Kuo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type δ-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application.

Original languageEnglish
Pages (from-to)877-879
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume81
Issue number4
DOIs
Publication statusPublished - 2005 Sep 1

Fingerprint

High electron mobility transistors
Transconductance
Electric potential
Electric breakdown

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

@article{a2f20c76a41a4725873ccf284a1c1c33,
title = "A numerical study of dc characteristics of HEMT with p-type δ-doped barrier",
abstract = "The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type δ-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application.",
author = "Y. Chang and Yen-Kuang Kuo",
year = "2005",
month = "9",
day = "1",
doi = "10.1007/s00339-004-2899-0",
language = "English",
volume = "81",
pages = "877--879",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
number = "4",

}

A numerical study of dc characteristics of HEMT with p-type δ-doped barrier. / Chang, Y.; Kuo, Yen-Kuang.

In: Applied Physics A: Materials Science and Processing, Vol. 81, No. 4, 01.09.2005, p. 877-879.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A numerical study of dc characteristics of HEMT with p-type δ-doped barrier

AU - Chang, Y.

AU - Kuo, Yen-Kuang

PY - 2005/9/1

Y1 - 2005/9/1

N2 - The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type δ-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application.

AB - The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type δ-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application.

UR - http://www.scopus.com/inward/record.url?scp=22044439749&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=22044439749&partnerID=8YFLogxK

U2 - 10.1007/s00339-004-2899-0

DO - 10.1007/s00339-004-2899-0

M3 - Article

AN - SCOPUS:22044439749

VL - 81

SP - 877

EP - 879

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 4

ER -