A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers

S. W. Hsieh; Y. K. Kuo

doi:10.1007/s00339-005-3386-y

A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers

S. W. Hsieh, Y. K. Kuo

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al_0.5In_0.5As electron stopper layer and a strain-compensated active region consisting of Al_0.175Ga _0.095In_0.73As∈(6 nm)/Al_0.32Ga _0.2In_0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.

Original language	English
Pages (from-to)	287-292
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	82
Issue number	2
DOIs	https://doi.org/10.1007/s00339-005-3386-y
Publication status	Published - 2006 Feb 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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title = "A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers",

abstract = "Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.",

author = "Hsieh, {S. W.} and Kuo, {Y. K.}",

year = "2006",

month = feb,

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doi = "10.1007/s00339-005-3386-y",

language = "English",

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journal = "Applied Physics A: Materials Science and Processing",

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AU - Hsieh, S. W.

AU - Kuo, Y. K.

PY - 2006/2/1

Y1 - 2006/2/1

N2 - Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.

AB - Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.

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