Abstract
Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.
| Original language | English |
|---|---|
| Pages (from-to) | 287-292 |
| Number of pages | 6 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 82 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2006 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers. / Hsieh, S. W.; Kuo, Y. K.
In: Applied Physics A: Materials Science and Processing, Vol. 82, No. 2, 01.02.2006, p. 287-292.Research output: Contribution to journal › Article
TY - JOUR
T1 - A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers
AU - Hsieh, S. W.
AU - Kuo, Y. K.
PY - 2006/2/1
Y1 - 2006/2/1
N2 - Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.
AB - Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.
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U2 - 10.1007/s00339-005-3386-y
DO - 10.1007/s00339-005-3386-y
M3 - Article
AN - SCOPUS:28544435793
VL - 82
SP - 287
EP - 292
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 2
ER -