A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers

S. W. Hsieh, Y. K. Kuo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.

Original languageEnglish
Pages (from-to)287-292
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume82
Issue number2
DOIs
Publication statusPublished - 2006 Feb 1

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cavities
Lasers
lasers
Electrons
Temperature
electrons
temperature
operating temperature
threshold currents
Semiconductor quantum wells
Heterojunctions
Optical properties
simulation
quantum wells
slopes
optical properties
temperature dependence

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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title = "A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers",
abstract = "Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.",
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A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers. / Hsieh, S. W.; Kuo, Y. K.

In: Applied Physics A: Materials Science and Processing, Vol. 82, No. 2, 01.02.2006, p. 287-292.

Research output: Contribution to journalArticle

TY - JOUR

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N2 - Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.

AB - Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stopper layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the experimental results of an identical laser structure fabricated by Selmic et al. The simulation results suggest that, with the use of a p-type Al0.5In0.5As electron stopper layer and a strain-compensated active region consisting of Al0.175Ga 0.095In0.73As∈(6 nm)/Al0.32Ga 0.2In0.48As∈(10 nm), a characteristic temperature as high as 108.7 K can be achieved for a 250-μm-long AlGaInAs/InP laser.

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