A novel technique for low-threshold and high-power InGaAs/GaAs strained-layer 0.98-μm buried heterostructure laser fabrication

D. C. Liou, W. H. Chiang, C. P. Lee, K. H. Chang, D. G. Liu, J. S. Wu, Y. K. Tu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A novel fabrication technique has been developed for InGaAs/GaAs strained-layer buried heterostructure lasers. Dielectric masks and Zn diffusion are not required in this technique. This novel fabrication process is much easier than the conventional approach and yields excellent laser results. A low threshold of 3 mA and high-power operation for lasing wavelength of 9800±20 Å have been achieved with graded index separate confinement heterostructure devices using this novel technique.

Original languageEnglish
Pages (from-to)1525-1527
Number of pages3
JournalJournal of Applied Physics
Volume71
Issue number3
DOIs
Publication statusPublished - 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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