A novel selective growth of nanowire on CMOS MEMS compatible gas sensor

Jiong Heng Lu, Chuen Ren Jeng, Chih-Hsiung Shen, Shu Jung Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we proposed a new sensing mechanism which the sensing structure with zinc oxide (ZnO) nanowires to increase sensitivity. The ZnO nanowires are grown selectively on top of the sensing membrane with proposed ring-type electrodes which is implemented using 0.35μm CMOS MEMS process. The ZnO nanowire is achieved by chemical bath deposition (CBD) method with several prepared solutions, zinc acetate dihydrate and hexamethylenetetramine mixed at Zn(CH3COO)2·2H2O C6H 12N4=11, the others is zinc nitrate hexahydrate and hexamethylenetetramine mixed at Zn(NO3)2× 6H 2O C6H12N4=51. The growth of nanowires reveals a novel selective deposition on the metal layers of sensing area other than the passivation of Si3N4 which means a high specific definition of sensing region beyond the conventional sol-gel method. The research on selective growth of nanowire benefits the deposition of sensing material on certain active regions beyond the drawback of conventional sol-gel deposition. The advantages of the sensor are low cost and suitable for industrial production.

Original languageEnglish
Title of host publicationIEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
PublisherIEEE Computer Society
Pages70-73
Number of pages4
ISBN (Print)9781479933877
DOIs
Publication statusPublished - 2013 Jan 1
Event2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013 - Tainan, Taiwan
Duration: 2013 Oct 62013 Oct 9

Other

Other2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
CountryTaiwan
CityTainan
Period13-10-0613-10-09

Fingerprint

Chemical sensors
Nanowires
MEMS
Zinc oxide
Zinc
Passivation
Sol-gel process
Sol-gels
Nitrates
Membranes
Electrodes
Sensors
Metals
Costs

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials

Cite this

Lu, J. H., Jeng, C. R., Shen, C-H., & Chen, S. J. (2013). A novel selective growth of nanowire on CMOS MEMS compatible gas sensor. In IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013 (pp. 70-73). [6707457] IEEE Computer Society. https://doi.org/10.1109/NMDC.2013.6707457
Lu, Jiong Heng ; Jeng, Chuen Ren ; Shen, Chih-Hsiung ; Chen, Shu Jung. / A novel selective growth of nanowire on CMOS MEMS compatible gas sensor. IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013. IEEE Computer Society, 2013. pp. 70-73
@inproceedings{b0f8a0979904424c83254814e09a4d5e,
title = "A novel selective growth of nanowire on CMOS MEMS compatible gas sensor",
abstract = "In this paper, we proposed a new sensing mechanism which the sensing structure with zinc oxide (ZnO) nanowires to increase sensitivity. The ZnO nanowires are grown selectively on top of the sensing membrane with proposed ring-type electrodes which is implemented using 0.35μm CMOS MEMS process. The ZnO nanowire is achieved by chemical bath deposition (CBD) method with several prepared solutions, zinc acetate dihydrate and hexamethylenetetramine mixed at Zn(CH3COO)2·2H2O C6H 12N4=11, the others is zinc nitrate hexahydrate and hexamethylenetetramine mixed at Zn(NO3)2× 6H 2O C6H12N4=51. The growth of nanowires reveals a novel selective deposition on the metal layers of sensing area other than the passivation of Si3N4 which means a high specific definition of sensing region beyond the conventional sol-gel method. The research on selective growth of nanowire benefits the deposition of sensing material on certain active regions beyond the drawback of conventional sol-gel deposition. The advantages of the sensor are low cost and suitable for industrial production.",
author = "Lu, {Jiong Heng} and Jeng, {Chuen Ren} and Chih-Hsiung Shen and Chen, {Shu Jung}",
year = "2013",
month = "1",
day = "1",
doi = "10.1109/NMDC.2013.6707457",
language = "English",
isbn = "9781479933877",
pages = "70--73",
booktitle = "IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013",
publisher = "IEEE Computer Society",
address = "United States",

}

Lu, JH, Jeng, CR, Shen, C-H & Chen, SJ 2013, A novel selective growth of nanowire on CMOS MEMS compatible gas sensor. in IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013., 6707457, IEEE Computer Society, pp. 70-73, 2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013, Tainan, Taiwan, 13-10-06. https://doi.org/10.1109/NMDC.2013.6707457

A novel selective growth of nanowire on CMOS MEMS compatible gas sensor. / Lu, Jiong Heng; Jeng, Chuen Ren; Shen, Chih-Hsiung; Chen, Shu Jung.

IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013. IEEE Computer Society, 2013. p. 70-73 6707457.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A novel selective growth of nanowire on CMOS MEMS compatible gas sensor

AU - Lu, Jiong Heng

AU - Jeng, Chuen Ren

AU - Shen, Chih-Hsiung

AU - Chen, Shu Jung

PY - 2013/1/1

Y1 - 2013/1/1

N2 - In this paper, we proposed a new sensing mechanism which the sensing structure with zinc oxide (ZnO) nanowires to increase sensitivity. The ZnO nanowires are grown selectively on top of the sensing membrane with proposed ring-type electrodes which is implemented using 0.35μm CMOS MEMS process. The ZnO nanowire is achieved by chemical bath deposition (CBD) method with several prepared solutions, zinc acetate dihydrate and hexamethylenetetramine mixed at Zn(CH3COO)2·2H2O C6H 12N4=11, the others is zinc nitrate hexahydrate and hexamethylenetetramine mixed at Zn(NO3)2× 6H 2O C6H12N4=51. The growth of nanowires reveals a novel selective deposition on the metal layers of sensing area other than the passivation of Si3N4 which means a high specific definition of sensing region beyond the conventional sol-gel method. The research on selective growth of nanowire benefits the deposition of sensing material on certain active regions beyond the drawback of conventional sol-gel deposition. The advantages of the sensor are low cost and suitable for industrial production.

AB - In this paper, we proposed a new sensing mechanism which the sensing structure with zinc oxide (ZnO) nanowires to increase sensitivity. The ZnO nanowires are grown selectively on top of the sensing membrane with proposed ring-type electrodes which is implemented using 0.35μm CMOS MEMS process. The ZnO nanowire is achieved by chemical bath deposition (CBD) method with several prepared solutions, zinc acetate dihydrate and hexamethylenetetramine mixed at Zn(CH3COO)2·2H2O C6H 12N4=11, the others is zinc nitrate hexahydrate and hexamethylenetetramine mixed at Zn(NO3)2× 6H 2O C6H12N4=51. The growth of nanowires reveals a novel selective deposition on the metal layers of sensing area other than the passivation of Si3N4 which means a high specific definition of sensing region beyond the conventional sol-gel method. The research on selective growth of nanowire benefits the deposition of sensing material on certain active regions beyond the drawback of conventional sol-gel deposition. The advantages of the sensor are low cost and suitable for industrial production.

UR - http://www.scopus.com/inward/record.url?scp=84893718747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893718747&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2013.6707457

DO - 10.1109/NMDC.2013.6707457

M3 - Conference contribution

AN - SCOPUS:84893718747

SN - 9781479933877

SP - 70

EP - 73

BT - IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013

PB - IEEE Computer Society

ER -

Lu JH, Jeng CR, Shen C-H, Chen SJ. A novel selective growth of nanowire on CMOS MEMS compatible gas sensor. In IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013. IEEE Computer Society. 2013. p. 70-73. 6707457 https://doi.org/10.1109/NMDC.2013.6707457