A novel selective growth of nanowire on CMOS MEMS compatible gas sensor

Jiong Heng Lu, Chuen Ren Jeng, Chih-Hsiung Shen, Shu Jung Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we proposed a new sensing mechanism which the sensing structure with zinc oxide (ZnO) nanowires to increase sensitivity. The ZnO nanowires are grown selectively on top of the sensing membrane with proposed ring-type electrodes which is implemented using 0.35μm CMOS MEMS process. The ZnO nanowire is achieved by chemical bath deposition (CBD) method with several prepared solutions, zinc acetate dihydrate and hexamethylenetetramine mixed at Zn(CH3COO)2·2H2O C6H 12N4=11, the others is zinc nitrate hexahydrate and hexamethylenetetramine mixed at Zn(NO3)2× 6H 2O C6H12N4=51. The growth of nanowires reveals a novel selective deposition on the metal layers of sensing area other than the passivation of Si3N4 which means a high specific definition of sensing region beyond the conventional sol-gel method. The research on selective growth of nanowire benefits the deposition of sensing material on certain active regions beyond the drawback of conventional sol-gel deposition. The advantages of the sensor are low cost and suitable for industrial production.

Original languageEnglish
Title of host publicationIEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
PublisherIEEE Computer Society
Pages70-73
Number of pages4
ISBN (Print)9781479933877
DOIs
Publication statusPublished - 2013 Jan 1
Event2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013 - Tainan, Taiwan
Duration: 2013 Oct 62013 Oct 9

Other

Other2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
CountryTaiwan
CityTainan
Period13-10-0613-10-09

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials

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