Abstract
Two-dimensional (2-D) Silicon phononic crystal (PnC) slab of a square array of cylindrical air holes in a 10μm thick free-standing silicon plate with line defects is characterized as a cavity-mode PnC resonator. Piezoelectric aluminum nitride (AlN) film is deployed as the interdigital transducers (IDT) to transmit and detect acoustic waves, thus making the whole microfabrication process CMOS-compatible. Both the band structure of the PnC and the transmission spectrum of the proposed PnC resonator are analyzed and optimized using finite element method (FEM). The measured quality factor (Q factor) of the microfabricated PnC resonator is over 1,000 at its resonant frequency of 152.46MHz. The proposed PnC resonator shows promising acoustic resonance characteristics for RF communications and sensing applications.
| Original language | English |
|---|---|
| Title of host publication | NEMS/MEMS Technology and Devices |
| Pages | 195-198 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2011 Jul 12 |
| Event | International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS - Suntec, Singapore Duration: 2011 Jun 26 → 2011 Jul 1 |
Publication series
| Name | Advanced Materials Research |
|---|---|
| Volume | 254 |
| ISSN (Print) | 1022-6680 |
Other
| Other | International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS |
|---|---|
| Country | Singapore |
| City | Suntec |
| Period | 11-06-26 → 11-07-01 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
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A novel micromechanical resonator using two-dimensional phononic crystal slab. / Wang, Nan; Hsiao, Fu Li; Palaniapan, Moorthi; Tsai, J. M.; Soon, B. W.; Kwong, Dim Lee; Lee, Chengkuo.
NEMS/MEMS Technology and Devices. 2011. p. 195-198 (Advanced Materials Research; Vol. 254).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A novel micromechanical resonator using two-dimensional phononic crystal slab
AU - Wang, Nan
AU - Hsiao, Fu Li
AU - Palaniapan, Moorthi
AU - Tsai, J. M.
AU - Soon, B. W.
AU - Kwong, Dim Lee
AU - Lee, Chengkuo
PY - 2011/7/12
Y1 - 2011/7/12
N2 - Two-dimensional (2-D) Silicon phononic crystal (PnC) slab of a square array of cylindrical air holes in a 10μm thick free-standing silicon plate with line defects is characterized as a cavity-mode PnC resonator. Piezoelectric aluminum nitride (AlN) film is deployed as the interdigital transducers (IDT) to transmit and detect acoustic waves, thus making the whole microfabrication process CMOS-compatible. Both the band structure of the PnC and the transmission spectrum of the proposed PnC resonator are analyzed and optimized using finite element method (FEM). The measured quality factor (Q factor) of the microfabricated PnC resonator is over 1,000 at its resonant frequency of 152.46MHz. The proposed PnC resonator shows promising acoustic resonance characteristics for RF communications and sensing applications.
AB - Two-dimensional (2-D) Silicon phononic crystal (PnC) slab of a square array of cylindrical air holes in a 10μm thick free-standing silicon plate with line defects is characterized as a cavity-mode PnC resonator. Piezoelectric aluminum nitride (AlN) film is deployed as the interdigital transducers (IDT) to transmit and detect acoustic waves, thus making the whole microfabrication process CMOS-compatible. Both the band structure of the PnC and the transmission spectrum of the proposed PnC resonator are analyzed and optimized using finite element method (FEM). The measured quality factor (Q factor) of the microfabricated PnC resonator is over 1,000 at its resonant frequency of 152.46MHz. The proposed PnC resonator shows promising acoustic resonance characteristics for RF communications and sensing applications.
UR - http://www.scopus.com/inward/record.url?scp=79960062851&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960062851&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.254.195
DO - 10.4028/www.scientific.net/AMR.254.195
M3 - Conference contribution
AN - SCOPUS:79960062851
SN - 9783037851456
T3 - Advanced Materials Research
SP - 195
EP - 198
BT - NEMS/MEMS Technology and Devices
ER -