TY - GEN
T1 - A novel micromechanical resonator using two-dimensional phononic crystal slab
AU - Wang, Nan
AU - Hsiao, Fu Li
AU - Palaniapan, Moorthi
AU - Tsai, J. M.
AU - Soon, B. W.
AU - Kwong, Dim Lee
AU - Lee, Chengkuo
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - Two-dimensional (2-D) Silicon phononic crystal (PnC) slab of a square array of cylindrical air holes in a 10μm thick free-standing silicon plate with line defects is characterized as a cavity-mode PnC resonator. Piezoelectric aluminum nitride (AlN) film is deployed as the interdigital transducers (IDT) to transmit and detect acoustic waves, thus making the whole microfabrication process CMOS-compatible. Both the band structure of the PnC and the transmission spectrum of the proposed PnC resonator are analyzed and optimized using finite element method (FEM). The measured quality factor (Q factor) of the microfabricated PnC resonator is over 1,000 at its resonant frequency of 152.46MHz. The proposed PnC resonator shows promising acoustic resonance characteristics for RF communications and sensing applications.
AB - Two-dimensional (2-D) Silicon phononic crystal (PnC) slab of a square array of cylindrical air holes in a 10μm thick free-standing silicon plate with line defects is characterized as a cavity-mode PnC resonator. Piezoelectric aluminum nitride (AlN) film is deployed as the interdigital transducers (IDT) to transmit and detect acoustic waves, thus making the whole microfabrication process CMOS-compatible. Both the band structure of the PnC and the transmission spectrum of the proposed PnC resonator are analyzed and optimized using finite element method (FEM). The measured quality factor (Q factor) of the microfabricated PnC resonator is over 1,000 at its resonant frequency of 152.46MHz. The proposed PnC resonator shows promising acoustic resonance characteristics for RF communications and sensing applications.
UR - http://www.scopus.com/inward/record.url?scp=79960062851&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960062851&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.254.195
DO - 10.4028/www.scientific.net/AMR.254.195
M3 - Conference contribution
AN - SCOPUS:79960062851
SN - 9783037851456
T3 - Advanced Materials Research
SP - 195
EP - 198
BT - NEMS/MEMS Technology and Devices
T2 - International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS
Y2 - 26 June 2011 through 1 July 2011
ER -