A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multi-layer resist system and a single-step electron-beam exposure

Yeong-Lin Lai, Yeong Kang Lai, Chun Yen Chang, Edward Y. Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A novel fabrication process of submicron T-shaped gates using an EGMEA and PMIPK multi-layer resist system and e-beam lithography has been developed. Due to the different sensitivities of the EGMEA and PMIPK resists, narrow/wide/narrow resist opening was obtained. The status of the electron scattering and the incident primary electron beams statistically construct the absorbed energy density distribution contours. The absorbed energy density distribution contours in association with the sensitivity feature of the resists and the appropriate development conditions determine the final resist profile. Only a single exposure step and a single development step are required. The simplified fabrication process of T-shaped gates significantly reduces not only the process time but also the production costs. The simple submicron T-shaped gate fabrication process studied provides a suitable technique for the mass manufacture of the advanced InP -based and GaAs -based microwave devices and circuits.

Original languageEnglish
Pages (from-to)555-558
Number of pages4
JournalMicroelectronic Engineering
Volume41-42
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Electron beams
electron beams
Fabrication
fabrication
density distribution
flux density
Microwave circuits
Microwave devices
production costs
Electron scattering
sensitivity
Lithography
electron scattering
lithography
microwaves
profiles
Costs
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "A novel fabrication process of submicron T-shaped gates using an EGMEA and PMIPK multi-layer resist system and e-beam lithography has been developed. Due to the different sensitivities of the EGMEA and PMIPK resists, narrow/wide/narrow resist opening was obtained. The status of the electron scattering and the incident primary electron beams statistically construct the absorbed energy density distribution contours. The absorbed energy density distribution contours in association with the sensitivity feature of the resists and the appropriate development conditions determine the final resist profile. Only a single exposure step and a single development step are required. The simplified fabrication process of T-shaped gates significantly reduces not only the process time but also the production costs. The simple submicron T-shaped gate fabrication process studied provides a suitable technique for the mass manufacture of the advanced InP -based and GaAs -based microwave devices and circuits.",
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A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multi-layer resist system and a single-step electron-beam exposure. / Lai, Yeong-Lin; Lai, Yeong Kang; Chang, Chun Yen; Chang, Edward Y.

In: Microelectronic Engineering, Vol. 41-42, 01.01.1998, p. 555-558.

Research output: Contribution to journalArticle

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AB - A novel fabrication process of submicron T-shaped gates using an EGMEA and PMIPK multi-layer resist system and e-beam lithography has been developed. Due to the different sensitivities of the EGMEA and PMIPK resists, narrow/wide/narrow resist opening was obtained. The status of the electron scattering and the incident primary electron beams statistically construct the absorbed energy density distribution contours. The absorbed energy density distribution contours in association with the sensitivity feature of the resists and the appropriate development conditions determine the final resist profile. Only a single exposure step and a single development step are required. The simplified fabrication process of T-shaped gates significantly reduces not only the process time but also the production costs. The simple submicron T-shaped gate fabrication process studied provides a suitable technique for the mass manufacture of the advanced InP -based and GaAs -based microwave devices and circuits.

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