A novel double heterojunction bipolar transistor for power amplifiers

Yue Ming Hsin, Chih Hsien Lin, Chang Chung Fan, Man Fang Huang, Kun Chuan Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Novel AlGaAslGaAs double heterojunction bipolar transistors (DHBTs) with composite cellector have been proposed and simulated to replace the conventional AlGaAs/GaAs DHBT. The composite collector combines both wide-bandgap (AlGaAs or InGaP) and narrow-bandgap (GaAs) materials. In the composite collector, AlGaAs (or InGaP) provides high breakdown field and thus is able to be employed to reduce thickness of collector while keeping the same breakdown voltage; GaAs provides high electron mobility and thus is able to be employed to reduce on-resistance and transit time. The simulation results demonstrate that novel AlGaAs/GaAs DHBTs have higher f t than conventional DHBT, higher BV CBO than HBTs, and. lower Knee voltage (on-resistance) than DHBT. The results also show the current gains of all -(D)HBTs with difference in the collector are almost identical. Three InGaP/GaAs (D)HBTs with different structures in collector have also been fabricated to confirm the idea of the proposed structures.

Original languageEnglish
Title of host publicationICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages124-127
Number of pages4
Publication statusPublished - 2000 Dec 1
Event2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000 - Port Dickson, Malaysia
Duration: 2000 Nov 132000 Nov 15

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000
CountryMalaysia
CityPort Dickson
Period00-11-1300-11-15

Fingerprint

Heterojunction bipolar transistors
Power amplifiers
Composite materials
Energy gap
Electron mobility
Electric breakdown
gallium arsenide
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hsin, Y. M., Lin, C. H., Fan, C. C., Huang, M. F., & Lin, K. C. (2000). A novel double heterojunction bipolar transistor for power amplifiers. In ICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 124-127). [932448] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).
Hsin, Yue Ming ; Lin, Chih Hsien ; Fan, Chang Chung ; Huang, Man Fang ; Lin, Kun Chuan. / A novel double heterojunction bipolar transistor for power amplifiers. ICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings. 2000. pp. 124-127 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).
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Hsin, YM, Lin, CH, Fan, CC, Huang, MF & Lin, KC 2000, A novel double heterojunction bipolar transistor for power amplifiers. in ICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings., 932448, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 124-127, 2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000, Port Dickson, Malaysia, 00-11-13.

A novel double heterojunction bipolar transistor for power amplifiers. / Hsin, Yue Ming; Lin, Chih Hsien; Fan, Chang Chung; Huang, Man Fang; Lin, Kun Chuan.

ICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings. 2000. p. 124-127 932448 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Hsin YM, Lin CH, Fan CC, Huang MF, Lin KC. A novel double heterojunction bipolar transistor for power amplifiers. In ICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings. 2000. p. 124-127. 932448. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).