A novel cold-FET method for determining extrinsic capacitances using a capacitive transmission line model

Yeong-Lin Lai, Cheng Tsung Chen

Research output: Contribution to journalConference article

2 Citations (Scopus)


A novel cold-FET method using a capacitive transmission line (CTL) model to extract extrinsic capacitances for the small-signal equivalent circuit of field-effect transistors (FET's) is proposed. The extrinsic gate capacitance (Cpg) and drain capacitance (Cpd) of the FET's are extracted on the basis of the distributed CTL model and ABCD matrix representation for the depletion region beneath gate under the pinched-off cold-FET condition. The extraction method proposed is applied to obtain the small-signal equivalent circuit model for the FET's. The simulated S parameters using the CTL model exhibit great agreement with the measured S parameters.

Original languageEnglish
Pages (from-to)1261-1264
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 2001 Dec 1
EventInternational Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States
Duration: 2001 May 202001 May 22


All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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