Abstract
A novel cold-FET method using a capacitive transmission line (CTL) model to extract extrinsic capacitances for the small-signal equivalent circuit of field-effect transistors (FET's) is proposed. The extrinsic gate capacitance (Cpg) and drain capacitance (Cpd) of the FET's are extracted on the basis of the distributed CTL model and ABCD matrix representation for the depletion region beneath gate under the pinched-off cold-FET condition. The extraction method proposed is applied to obtain the small-signal equivalent circuit model for the FET's. The simulated S parameters using the CTL model exhibit great agreement with the measured S parameters.
Original language | English |
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Pages (from-to) | 1261-1264 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 2 |
Publication status | Published - 2001 Dec 1 |
Event | International Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States Duration: 2001 May 20 → 2001 May 22 |
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering