A novel cold-FET method for determining extrinsic capacitances using a capacitive transmission line model

Yeong-Lin Lai, Cheng Tsung Chen

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

A novel cold-FET method using a capacitive transmission line (CTL) model to extract extrinsic capacitances for the small-signal equivalent circuit of field-effect transistors (FET's) is proposed. The extrinsic gate capacitance (Cpg) and drain capacitance (Cpd) of the FET's are extracted on the basis of the distributed CTL model and ABCD matrix representation for the depletion region beneath gate under the pinched-off cold-FET condition. The extraction method proposed is applied to obtain the small-signal equivalent circuit model for the FET's. The simulated S parameters using the CTL model exhibit great agreement with the measured S parameters.

Original languageEnglish
Pages (from-to)1261-1264
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 2001 Dec 1
EventInternational Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States
Duration: 2001 May 202001 May 22

Fingerprint

Field effect transistors
transmission lines
Electric lines
Capacitance
field effect transistors
capacitance
Scattering parameters
equivalent circuits
Equivalent circuits
depletion
matrices

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{17af17cfcd6544f4aa414041d0714b2e,
title = "A novel cold-FET method for determining extrinsic capacitances using a capacitive transmission line model",
abstract = "A novel cold-FET method using a capacitive transmission line (CTL) model to extract extrinsic capacitances for the small-signal equivalent circuit of field-effect transistors (FET's) is proposed. The extrinsic gate capacitance (Cpg) and drain capacitance (Cpd) of the FET's are extracted on the basis of the distributed CTL model and ABCD matrix representation for the depletion region beneath gate under the pinched-off cold-FET condition. The extraction method proposed is applied to obtain the small-signal equivalent circuit model for the FET's. The simulated S parameters using the CTL model exhibit great agreement with the measured S parameters.",
author = "Yeong-Lin Lai and Chen, {Cheng Tsung}",
year = "2001",
month = "12",
day = "1",
language = "English",
volume = "2",
pages = "1261--1264",
journal = "IEEE MTT-S International Microwave Symposium Digest",
issn = "0149-645X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

A novel cold-FET method for determining extrinsic capacitances using a capacitive transmission line model. / Lai, Yeong-Lin; Chen, Cheng Tsung.

In: IEEE MTT-S International Microwave Symposium Digest, Vol. 2, 01.12.2001, p. 1261-1264.

Research output: Contribution to journalConference article

TY - JOUR

T1 - A novel cold-FET method for determining extrinsic capacitances using a capacitive transmission line model

AU - Lai, Yeong-Lin

AU - Chen, Cheng Tsung

PY - 2001/12/1

Y1 - 2001/12/1

N2 - A novel cold-FET method using a capacitive transmission line (CTL) model to extract extrinsic capacitances for the small-signal equivalent circuit of field-effect transistors (FET's) is proposed. The extrinsic gate capacitance (Cpg) and drain capacitance (Cpd) of the FET's are extracted on the basis of the distributed CTL model and ABCD matrix representation for the depletion region beneath gate under the pinched-off cold-FET condition. The extraction method proposed is applied to obtain the small-signal equivalent circuit model for the FET's. The simulated S parameters using the CTL model exhibit great agreement with the measured S parameters.

AB - A novel cold-FET method using a capacitive transmission line (CTL) model to extract extrinsic capacitances for the small-signal equivalent circuit of field-effect transistors (FET's) is proposed. The extrinsic gate capacitance (Cpg) and drain capacitance (Cpd) of the FET's are extracted on the basis of the distributed CTL model and ABCD matrix representation for the depletion region beneath gate under the pinched-off cold-FET condition. The extraction method proposed is applied to obtain the small-signal equivalent circuit model for the FET's. The simulated S parameters using the CTL model exhibit great agreement with the measured S parameters.

UR - http://www.scopus.com/inward/record.url?scp=0035689679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035689679&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035689679

VL - 2

SP - 1261

EP - 1264

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

ER -