Abstract
A new pinched-off cold FET method to extract the parasitic capacitances of FETs is proposed in this paper. The method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinched-off cold FETs. The parasitic gate capacitance (C pg) and the parasitic drain capacitance (C pd) of FETs are extracted using the linear regression technique associated with the frequency responses of Y-parameters. The extraction method can be applied to the small-signal equivalent-circuit modeling of the FETs including MESFETs, heterojunction FETs, and high-electron-mobility transistors. According to the new analytical method, the simulated S-parameters exhibit great agreement with the measured S-parameters for the equivalent-circuit models of FETs.
| Original language | English |
|---|---|
| Pages (from-to) | 1410-1418 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 49 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2001 Aug 1 |
| Event | 2000 IEEE Radio and Wireless Conference (RAWCON) - Denver, CO, United States Duration: 2001 Sep 10 → 2001 Oct 13 |
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All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
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A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits. / Lai, Yeong Lin; Hsu, Kuo Hua.
In: IEEE Transactions on Microwave Theory and Techniques, Vol. 49, No. 8, 01.08.2001, p. 1410-1418.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits
AU - Lai, Yeong Lin
AU - Hsu, Kuo Hua
PY - 2001/8/1
Y1 - 2001/8/1
N2 - A new pinched-off cold FET method to extract the parasitic capacitances of FETs is proposed in this paper. The method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinched-off cold FETs. The parasitic gate capacitance (C pg) and the parasitic drain capacitance (C pd) of FETs are extracted using the linear regression technique associated with the frequency responses of Y-parameters. The extraction method can be applied to the small-signal equivalent-circuit modeling of the FETs including MESFETs, heterojunction FETs, and high-electron-mobility transistors. According to the new analytical method, the simulated S-parameters exhibit great agreement with the measured S-parameters for the equivalent-circuit models of FETs.
AB - A new pinched-off cold FET method to extract the parasitic capacitances of FETs is proposed in this paper. The method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinched-off cold FETs. The parasitic gate capacitance (C pg) and the parasitic drain capacitance (C pd) of FETs are extracted using the linear regression technique associated with the frequency responses of Y-parameters. The extraction method can be applied to the small-signal equivalent-circuit modeling of the FETs including MESFETs, heterojunction FETs, and high-electron-mobility transistors. According to the new analytical method, the simulated S-parameters exhibit great agreement with the measured S-parameters for the equivalent-circuit models of FETs.
UR - http://www.scopus.com/inward/record.url?scp=0035417050&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035417050&partnerID=8YFLogxK
U2 - 10.1109/22.939921
DO - 10.1109/22.939921
M3 - Conference article
AN - SCOPUS:0035417050
VL - 49
SP - 1410
EP - 1418
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
SN - 0018-9480
IS - 8
ER -