A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits

Yeong Lin Lai; Kuo Hua Hsu

doi:10.1109/22.939921

A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits

Yeong Lin Lai, Kuo Hua Hsu

Department of Mechatronic Engineering

Research output: Contribution to journal › Conference article

31 Citations (Scopus)

Abstract

A new pinched-off cold FET method to extract the parasitic capacitances of FETs is proposed in this paper. The method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinched-off cold FETs. The parasitic gate capacitance (C _pg) and the parasitic drain capacitance (C _pd) of FETs are extracted using the linear regression technique associated with the frequency responses of Y-parameters. The extraction method can be applied to the small-signal equivalent-circuit modeling of the FETs including MESFETs, heterojunction FETs, and high-electron-mobility transistors. According to the new analytical method, the simulated S-parameters exhibit great agreement with the measured S-parameters for the equivalent-circuit models of FETs.

Original language	English
Pages (from-to)	1410-1418
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	49
Issue number	8
DOIs	https://doi.org/10.1109/22.939921
Publication status	Published - 2001 Aug 1
Event	2000 IEEE Radio and Wireless Conference (RAWCON) - Denver, CO, United States Duration: 2001 Sep 10 → 2001 Oct 13

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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Lai, Y. L., & Hsu, K. H. (2001). A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits. IEEE Transactions on Microwave Theory and Techniques, 49(8), 1410-1418. https://doi.org/10.1109/22.939921

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