A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits

Yeong Lin Lai, Kuo Hua Hsu

Research output: Contribution to journalConference article

30 Citations (Scopus)

Abstract

A new pinched-off cold FET method to extract the parasitic capacitances of FETs is proposed in this paper. The method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinched-off cold FETs. The parasitic gate capacitance (C pg) and the parasitic drain capacitance (C pd) of FETs are extracted using the linear regression technique associated with the frequency responses of Y-parameters. The extraction method can be applied to the small-signal equivalent-circuit modeling of the FETs including MESFETs, heterojunction FETs, and high-electron-mobility transistors. According to the new analytical method, the simulated S-parameters exhibit great agreement with the measured S-parameters for the equivalent-circuit models of FETs.

Original languageEnglish
Pages (from-to)1410-1418
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume49
Issue number8
DOIs
Publication statusPublished - 2001 Aug 1
Event2000 IEEE Radio and Wireless Conference (RAWCON) - Denver, CO, United States
Duration: 2001 Sep 102001 Oct 13

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Field effect transistors
equivalent circuits
Equivalent circuits
Capacitance
field effect transistors
capacitance
Scattering parameters
High electron mobility transistors
Linear regression
Frequency response
high electron mobility transistors
Heterojunctions
frequency response
heterojunctions
regression analysis
depletion

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "A new pinched-off cold FET method to extract the parasitic capacitances of FETs is proposed in this paper. The method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinched-off cold FETs. The parasitic gate capacitance (C pg) and the parasitic drain capacitance (C pd) of FETs are extracted using the linear regression technique associated with the frequency responses of Y-parameters. The extraction method can be applied to the small-signal equivalent-circuit modeling of the FETs including MESFETs, heterojunction FETs, and high-electron-mobility transistors. According to the new analytical method, the simulated S-parameters exhibit great agreement with the measured S-parameters for the equivalent-circuit models of FETs.",
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A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits. / Lai, Yeong Lin; Hsu, Kuo Hua.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 49, No. 8, 01.08.2001, p. 1410-1418.

Research output: Contribution to journalConference article

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