Abstract
In this paper, we present a complete electrothermal study of a micromachined active thermopile for frequency and transient response. The work has been carried out combining Fourier, Laplace transfromtion with the experimental measurements and finally give a electrothermal modeling. Device parameters of thermal microsensors are essential for evaluating the sensor performances and their simulation modeling. A considerable number of measurements for microsensors and system characterizations rely on the analysis of its step response. The behavior on spectrum domain and time domain are predicted and been proved by our experiments. A new investigation of high frequency response for CMOS compatible thermoelectric infrared sensors is proposed and fabricated. The sensors are fabricated by an 1.2 μm industrial CMOS IC technologies combined with a subsequent anisotropic front-side etching stop. It consists of a heating polysilicon resistor and an Al / n-polysilicon thermopile, embedded in an oxide/nitride membrane. High frequency response of test sample shows unexpected large signal, which is quite interesting and never reported before. To analyze the transient response, we build an electrothermal model for our test thermopile. The equivalent electrical circuitry has been built to simulate the operation of micromachined thermopile when radiation power comes. We have made a thoroughly measurement and analysis, and given some interesting results.
| Original language | English |
|---|---|
| Article number | 603518 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 6035 |
| DOIs | |
| Publication status | Published - 2006 Mar 30 |
| Event | Microelectronics: Design, Technology, and Packaging II - Brisbane, Australia Duration: 2005 Dec 12 → 2005 Dec 14 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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A new investigation of high-frequency thermopile response. / Chen, Shu Jung; Shen, Chih Hsiung.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6035, 603518, 30.03.2006.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - A new investigation of high-frequency thermopile response
AU - Chen, Shu Jung
AU - Shen, Chih Hsiung
PY - 2006/3/30
Y1 - 2006/3/30
N2 - In this paper, we present a complete electrothermal study of a micromachined active thermopile for frequency and transient response. The work has been carried out combining Fourier, Laplace transfromtion with the experimental measurements and finally give a electrothermal modeling. Device parameters of thermal microsensors are essential for evaluating the sensor performances and their simulation modeling. A considerable number of measurements for microsensors and system characterizations rely on the analysis of its step response. The behavior on spectrum domain and time domain are predicted and been proved by our experiments. A new investigation of high frequency response for CMOS compatible thermoelectric infrared sensors is proposed and fabricated. The sensors are fabricated by an 1.2 μm industrial CMOS IC technologies combined with a subsequent anisotropic front-side etching stop. It consists of a heating polysilicon resistor and an Al / n-polysilicon thermopile, embedded in an oxide/nitride membrane. High frequency response of test sample shows unexpected large signal, which is quite interesting and never reported before. To analyze the transient response, we build an electrothermal model for our test thermopile. The equivalent electrical circuitry has been built to simulate the operation of micromachined thermopile when radiation power comes. We have made a thoroughly measurement and analysis, and given some interesting results.
AB - In this paper, we present a complete electrothermal study of a micromachined active thermopile for frequency and transient response. The work has been carried out combining Fourier, Laplace transfromtion with the experimental measurements and finally give a electrothermal modeling. Device parameters of thermal microsensors are essential for evaluating the sensor performances and their simulation modeling. A considerable number of measurements for microsensors and system characterizations rely on the analysis of its step response. The behavior on spectrum domain and time domain are predicted and been proved by our experiments. A new investigation of high frequency response for CMOS compatible thermoelectric infrared sensors is proposed and fabricated. The sensors are fabricated by an 1.2 μm industrial CMOS IC technologies combined with a subsequent anisotropic front-side etching stop. It consists of a heating polysilicon resistor and an Al / n-polysilicon thermopile, embedded in an oxide/nitride membrane. High frequency response of test sample shows unexpected large signal, which is quite interesting and never reported before. To analyze the transient response, we build an electrothermal model for our test thermopile. The equivalent electrical circuitry has been built to simulate the operation of micromachined thermopile when radiation power comes. We have made a thoroughly measurement and analysis, and given some interesting results.
UR - http://www.scopus.com/inward/record.url?scp=33645158813&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645158813&partnerID=8YFLogxK
U2 - 10.1117/12.640254
DO - 10.1117/12.640254
M3 - Conference article
AN - SCOPUS:33645158813
VL - 6035
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
M1 - 603518
ER -