A monolithic isolated gate driver with on-chip transformer

Jau-Jr/jau Jr/jau Lin; Kai Chieh Lin

doi:10.1109/IFEEC.2017.7992223

A monolithic isolated gate driver with on-chip transformer

Jau-Jr/jau Jr/jau Lin, Kai Chieh Lin

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm². Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.

Original language	English
Title of host publication	2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1256-1259
Number of pages	4
ISBN (Electronic)	9781509051571
DOIs	https://doi.org/10.1109/IFEEC.2017.7992223
Publication status	Published - 2017 Jul 25
Event	3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 - Kaohsiung, Taiwan Duration: 2017 Jun 3 → 2017 Jun 7

Publication series

Name	2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017

Other

Other	3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
Country	Taiwan
City	Kaohsiung
Period	17-06-03 → 17-06-07

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All Science Journal Classification (ASJC) codes

Energy Engineering and Power Technology
Electrical and Electronic Engineering
Control and Optimization

Cite this

Lin, J-J. J., & Lin, K. C. (2017). A monolithic isolated gate driver with on-chip transformer. In 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 (pp. 1256-1259). [7992223] (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IFEEC.2017.7992223

Lin, Jau-Jr/jau Jr/jau ; Lin, Kai Chieh. / A monolithic isolated gate driver with on-chip transformer. 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1256-1259 (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017).

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title = "A monolithic isolated gate driver with on-chip transformer",

abstract = "A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.",

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Lin, J-JJ & Lin, KC 2017, A monolithic isolated gate driver with on-chip transformer. in 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017., 7992223, 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1256-1259, 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, Kaohsiung, Taiwan, 17-06-03. https://doi.org/10.1109/IFEEC.2017.7992223

A monolithic isolated gate driver with on-chip transformer. / Lin, Jau-Jr/jau Jr/jau; Lin, Kai Chieh.

2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1256-1259 7992223 (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.

AB - A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.

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Lin J-JJ, Lin KC. A monolithic isolated gate driver with on-chip transformer. In 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1256-1259. 7992223. (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017). https://doi.org/10.1109/IFEEC.2017.7992223

Access to Document

10.1109/IFEEC.2017.7992223