Abstract
A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.
| Original language | English |
|---|---|
| Title of host publication | 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1256-1259 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509051571 |
| DOIs | |
| Publication status | Published - 2017 Jul 25 |
| Event | 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 - Kaohsiung, Taiwan Duration: 2017 Jun 3 → 2017 Jun 7 |
Publication series
| Name | 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 |
|---|
Other
| Other | 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 |
|---|---|
| Country | Taiwan |
| City | Kaohsiung |
| Period | 17-06-03 → 17-06-07 |
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All Science Journal Classification (ASJC) codes
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
- Control and Optimization
Cite this
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A monolithic isolated gate driver with on-chip transformer. / Lin, Jau-Jr/jau Jr/jau; Lin, Kai Chieh.
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1256-1259 7992223 (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A monolithic isolated gate driver with on-chip transformer
AU - Lin, Jau-Jr/jau Jr/jau
AU - Lin, Kai Chieh
PY - 2017/7/25
Y1 - 2017/7/25
N2 - A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.
AB - A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.
UR - http://www.scopus.com/inward/record.url?scp=85031705775&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85031705775&partnerID=8YFLogxK
U2 - 10.1109/IFEEC.2017.7992223
DO - 10.1109/IFEEC.2017.7992223
M3 - Conference contribution
AN - SCOPUS:85031705775
T3 - 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
SP - 1256
EP - 1259
BT - 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -