TY - GEN
T1 - A monolithic isolated gate driver with on-chip transformer
AU - Lin, Jau-Jr/jau Jr/jau
AU - Lin, Kai Chieh
PY - 2017/7/25
Y1 - 2017/7/25
N2 - A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.
AB - A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.
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U2 - 10.1109/IFEEC.2017.7992223
DO - 10.1109/IFEEC.2017.7992223
M3 - Conference contribution
AN - SCOPUS:85031705775
T3 - 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
SP - 1256
EP - 1259
BT - 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
Y2 - 3 June 2017 through 7 June 2017
ER -