A monolithic isolated gate driver with on-chip transformer

Jau-Jr/jau Jr/jau Lin, Kai Chieh Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.

Original languageEnglish
Title of host publication2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1256-1259
Number of pages4
ISBN (Electronic)9781509051571
DOIs
Publication statusPublished - 2017 Jul 25
Event3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 - Kaohsiung, Taiwan
Duration: 2017 Jun 32017 Jun 7

Publication series

Name2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017

Other

Other3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
CountryTaiwan
CityKaohsiung
Period17-06-0317-06-07

Fingerprint

Transformer
Driver
Chip
Variable frequency oscillators
Electric potential
Voltage
Isolation
Coefficient
Demonstrate
Simulation

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Control and Optimization

Cite this

Lin, J-J. J., & Lin, K. C. (2017). A monolithic isolated gate driver with on-chip transformer. In 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 (pp. 1256-1259). [7992223] (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IFEEC.2017.7992223
Lin, Jau-Jr/jau Jr/jau ; Lin, Kai Chieh. / A monolithic isolated gate driver with on-chip transformer. 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1256-1259 (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017).
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title = "A monolithic isolated gate driver with on-chip transformer",
abstract = "A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.",
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Lin, J-JJ & Lin, KC 2017, A monolithic isolated gate driver with on-chip transformer. in 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017., 7992223, 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1256-1259, 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, Kaohsiung, Taiwan, 17-06-03. https://doi.org/10.1109/IFEEC.2017.7992223

A monolithic isolated gate driver with on-chip transformer. / Lin, Jau-Jr/jau Jr/jau; Lin, Kai Chieh.

2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1256-1259 7992223 (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.

AB - A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm2. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (∼0.97). The tapped transformer has a higher isolation voltage (∼3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.

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Lin J-JJ, Lin KC. A monolithic isolated gate driver with on-chip transformer. In 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1256-1259. 7992223. (2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017). https://doi.org/10.1109/IFEEC.2017.7992223