A monolithic isolated gate driver using an on-chip transformer and a voltage level shifter

Kai Chieh Lin, Jau Jr Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper proposes a monolithic isolated gate driver design with a voltage level shifter. Incorporating voltage level converters can effectively reduce input drive voltage requirements and the overall energy needed to the power gate drivers. The on-chip transformer detailed in this study consists of a pair of on-chip inductors. Two types of the on-chip transformer structures are used: a stacked transformer (featuring higher coupling coefficient) and a tapped transformer (featuring higher voltage isolation). The on-chip transformer, full-bridge rectifier, gate driver, and voltage level converter were all produced using the TSMC 0.25-μm HV (high-voltage) CMOS process. Compared to the ündings of the previous study, simulations conducted in this study showed that the proposed monolithic isolated gate driver with a voltage level shifter required a 62% lower power input voltage and 34% less power consumption. Moreover, it could provide 12 V of output voltage and drive a load of 6000 pF with the rise and fall time less than 1 μs.

Original languageEnglish
Title of host publication2017 International Conference on Circuits, System and Simulation, ICCSS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages82-85
Number of pages4
ISBN (Electronic)9781538603925
DOIs
Publication statusPublished - 2017 Aug 30
Event2017 International Conference on Circuits, System and Simulation, ICCSS 2017 - London, United Kingdom
Duration: 2017 Jul 142017 Jul 17

Publication series

Name2017 International Conference on Circuits, System and Simulation, ICCSS 2017

Other

Other2017 International Conference on Circuits, System and Simulation, ICCSS 2017
CountryUnited Kingdom
CityLondon
Period17-07-1417-07-17

Fingerprint

Transformer
Driver
Chip
Voltage
Electric potential
Converter
Isolation
Power Consumption
Electric power utilization
Simulation Study
Output
Requirements
Coefficient
Energy

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Electrical and Electronic Engineering

Cite this

Lin, K. C., & Lin, J. J. (2017). A monolithic isolated gate driver using an on-chip transformer and a voltage level shifter. In 2017 International Conference on Circuits, System and Simulation, ICCSS 2017 (pp. 82-85). [8023187] (2017 International Conference on Circuits, System and Simulation, ICCSS 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CIRSYSSIM.2017.8023187
Lin, Kai Chieh ; Lin, Jau Jr. / A monolithic isolated gate driver using an on-chip transformer and a voltage level shifter. 2017 International Conference on Circuits, System and Simulation, ICCSS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 82-85 (2017 International Conference on Circuits, System and Simulation, ICCSS 2017).
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abstract = "This paper proposes a monolithic isolated gate driver design with a voltage level shifter. Incorporating voltage level converters can effectively reduce input drive voltage requirements and the overall energy needed to the power gate drivers. The on-chip transformer detailed in this study consists of a pair of on-chip inductors. Two types of the on-chip transformer structures are used: a stacked transformer (featuring higher coupling coefficient) and a tapped transformer (featuring higher voltage isolation). The on-chip transformer, full-bridge rectifier, gate driver, and voltage level converter were all produced using the TSMC 0.25-μm HV (high-voltage) CMOS process. Compared to the {\"u}ndings of the previous study, simulations conducted in this study showed that the proposed monolithic isolated gate driver with a voltage level shifter required a 62{\%} lower power input voltage and 34{\%} less power consumption. Moreover, it could provide 12 V of output voltage and drive a load of 6000 pF with the rise and fall time less than 1 μs.",
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Lin, KC & Lin, JJ 2017, A monolithic isolated gate driver using an on-chip transformer and a voltage level shifter. in 2017 International Conference on Circuits, System and Simulation, ICCSS 2017., 8023187, 2017 International Conference on Circuits, System and Simulation, ICCSS 2017, Institute of Electrical and Electronics Engineers Inc., pp. 82-85, 2017 International Conference on Circuits, System and Simulation, ICCSS 2017, London, United Kingdom, 17-07-14. https://doi.org/10.1109/CIRSYSSIM.2017.8023187

A monolithic isolated gate driver using an on-chip transformer and a voltage level shifter. / Lin, Kai Chieh; Lin, Jau Jr.

2017 International Conference on Circuits, System and Simulation, ICCSS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 82-85 8023187 (2017 International Conference on Circuits, System and Simulation, ICCSS 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This paper proposes a monolithic isolated gate driver design with a voltage level shifter. Incorporating voltage level converters can effectively reduce input drive voltage requirements and the overall energy needed to the power gate drivers. The on-chip transformer detailed in this study consists of a pair of on-chip inductors. Two types of the on-chip transformer structures are used: a stacked transformer (featuring higher coupling coefficient) and a tapped transformer (featuring higher voltage isolation). The on-chip transformer, full-bridge rectifier, gate driver, and voltage level converter were all produced using the TSMC 0.25-μm HV (high-voltage) CMOS process. Compared to the ündings of the previous study, simulations conducted in this study showed that the proposed monolithic isolated gate driver with a voltage level shifter required a 62% lower power input voltage and 34% less power consumption. Moreover, it could provide 12 V of output voltage and drive a load of 6000 pF with the rise and fall time less than 1 μs.

AB - This paper proposes a monolithic isolated gate driver design with a voltage level shifter. Incorporating voltage level converters can effectively reduce input drive voltage requirements and the overall energy needed to the power gate drivers. The on-chip transformer detailed in this study consists of a pair of on-chip inductors. Two types of the on-chip transformer structures are used: a stacked transformer (featuring higher coupling coefficient) and a tapped transformer (featuring higher voltage isolation). The on-chip transformer, full-bridge rectifier, gate driver, and voltage level converter were all produced using the TSMC 0.25-μm HV (high-voltage) CMOS process. Compared to the ündings of the previous study, simulations conducted in this study showed that the proposed monolithic isolated gate driver with a voltage level shifter required a 62% lower power input voltage and 34% less power consumption. Moreover, it could provide 12 V of output voltage and drive a load of 6000 pF with the rise and fall time less than 1 μs.

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Lin KC, Lin JJ. A monolithic isolated gate driver using an on-chip transformer and a voltage level shifter. In 2017 International Conference on Circuits, System and Simulation, ICCSS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 82-85. 8023187. (2017 International Conference on Circuits, System and Simulation, ICCSS 2017). https://doi.org/10.1109/CIRSYSSIM.2017.8023187