A mixed-dimensional light-emitting diode based on a p-MoS2 nanosheet and an n-CdSe nanowire

Pan Li, Kai Yuan, Der Yuh Lin, Xiaolong Xu, Yilun Wang, Yi Wan, Haoran Yu, Kun Zhang, Yu Ye, Lun Dai

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The construction of the mixed-dimensional van der Waals (vdW) heterostructures with two-dimensional (2D) and one-dimensional (1D) materials can advantageously integrate their respective dimensional properties to produce new device functionalities and/or enhance device performance. In this case, a single semiconductor nanowire (NW) can function as an optical cavity and a gain medium, while the atomically thin 2D material does not strongly absorb the NW's light emission or disturb the optical propagation mode. Therefore, the mixed-dimensional 2D/1D vdW heterostructure might provide a new route to realize high-efficiency light-emitting diodes (LEDs) and/or even electrically driven lasers. Here, we report a LED based on a p-type MoS2 nanosheet and an n-type CdSe NW. The 2D/1D vdW heterojunction diode exhibits a rectification ratio of ∼24 at Vds = ±3 V, and a low turn-on voltage of ∼1.5 V. Under the forward bias exceeding the turn-on voltage, the 2D/1D vdW heterojunction exhibits strong electroluminescence centered at ∼709 nm, corresponding to the band-edge emission of the CdSe NW. This novel 2D/1D vdW device, which takes advantages of both 2D and 1D semiconductors, enables potential future applications in electrically driven lasers, high-sensitivity sensors, and transparent flexible devices.

Original languageEnglish
Pages (from-to)18175-18179
Number of pages5
Issue number46
Publication statusPublished - 2017 Dec 14

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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