A low power CMOS temperature sensor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper proposed a low-power smart temperature sensor. The sensor consisted of a PTAT circuit, and a ring oscillator. The current of the PTAT circuit was used to drive the ring oscillator which generates a temperature related signal. The sensor was implemented by the TSMC CMOS 0.35 μm 2P4M digital process. The core area is only 1105.59 μm2. The power consumption is about 159.15 nW. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.991 during the temperature range. The proposed sensor required only one supply voltage. The core area was small. Therefore, the sensor was suitable for embedded in any circuit that required temperature monitoring.

Original languageEnglish
Title of host publicationInnovation for Applied Science and Technology
Pages1729-1733
Number of pages5
DOIs
Publication statusPublished - 2013 Feb 20
Event2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012 - Kaohsiung, Taiwan
Duration: 2012 Nov 22012 Nov 6

Publication series

NameApplied Mechanics and Materials
Volume284-287
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Other

Other2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012
CountryTaiwan
CityKaohsiung
Period12-11-0212-11-06

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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