A low power CMOS temperature sensor

Shu-chung Yi

doi:10.4028/www.scientific.net/AMM.284-287.1729

A low power CMOS temperature sensor

Shu-chung Yi

Department of Computer Science and Information Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper proposed a low-power smart temperature sensor. The sensor consisted of a PTAT circuit, and a ring oscillator. The current of the PTAT circuit was used to drive the ring oscillator which generates a temperature related signal. The sensor was implemented by the TSMC CMOS 0.35 μm 2P4M digital process. The core area is only 1105.59 μm2. The power consumption is about 159.15 nW. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.991 during the temperature range. The proposed sensor required only one supply voltage. The core area was small. Therefore, the sensor was suitable for embedded in any circuit that required temperature monitoring.

Original language	English
Title of host publication	Innovation for Applied Science and Technology
Pages	1729-1733
Number of pages	5
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.284-287.1729
Publication status	Published - 2013 Feb 20
Event	2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012 - Kaohsiung, Taiwan Duration: 2012 Nov 2 → 2012 Nov 6

Publication series

Name	Applied Mechanics and Materials
Volume	284-287
ISSN (Print)	1660-9336
ISSN (Electronic)	1662-7482

Other

Other	2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012
Country	Taiwan
City	Kaohsiung
Period	12-11-02 → 12-11-06

All Science Journal Classification (ASJC) codes

Engineering(all)

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title = "A low power CMOS temperature sensor",

abstract = "This paper proposed a low-power smart temperature sensor. The sensor consisted of a PTAT circuit, and a ring oscillator. The current of the PTAT circuit was used to drive the ring oscillator which generates a temperature related signal. The sensor was implemented by the TSMC CMOS 0.35 μm 2P4M digital process. The core area is only 1105.59 μm2. The power consumption is about 159.15 nW. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.991 during the temperature range. The proposed sensor required only one supply voltage. The core area was small. Therefore, the sensor was suitable for embedded in any circuit that required temperature monitoring.",

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N2 - This paper proposed a low-power smart temperature sensor. The sensor consisted of a PTAT circuit, and a ring oscillator. The current of the PTAT circuit was used to drive the ring oscillator which generates a temperature related signal. The sensor was implemented by the TSMC CMOS 0.35 μm 2P4M digital process. The core area is only 1105.59 μm2. The power consumption is about 159.15 nW. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.991 during the temperature range. The proposed sensor required only one supply voltage. The core area was small. Therefore, the sensor was suitable for embedded in any circuit that required temperature monitoring.

AB - This paper proposed a low-power smart temperature sensor. The sensor consisted of a PTAT circuit, and a ring oscillator. The current of the PTAT circuit was used to drive the ring oscillator which generates a temperature related signal. The sensor was implemented by the TSMC CMOS 0.35 μm 2P4M digital process. The core area is only 1105.59 μm2. The power consumption is about 159.15 nW. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.991 during the temperature range. The proposed sensor required only one supply voltage. The core area was small. Therefore, the sensor was suitable for embedded in any circuit that required temperature monitoring.

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