Abstract
This paper proposed a low-power smart temperature sensor. The sensor consisted of a PTAT circuit, and a ring oscillator. The current of the PTAT circuit was used to drive the ring oscillator which generates a temperature related signal. The sensor was implemented by the TSMC CMOS 0.35 μm 2P4M digital process. The core area is only 1105.59 μm2. The power consumption is about 159.15 nW. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.991 during the temperature range. The proposed sensor required only one supply voltage. The core area was small. Therefore, the sensor was suitable for embedded in any circuit that required temperature monitoring.
| Original language | English |
|---|---|
| Title of host publication | Innovation for Applied Science and Technology |
| Pages | 1729-1733 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - 2013 Feb 20 |
| Event | 2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012 - Kaohsiung, Taiwan Duration: 2012 Nov 2 → 2012 Nov 6 |
Publication series
| Name | Applied Mechanics and Materials |
|---|---|
| Volume | 284-287 |
| ISSN (Print) | 1660-9336 |
| ISSN (Electronic) | 1662-7482 |
Other
| Other | 2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012 |
|---|---|
| Country | Taiwan |
| City | Kaohsiung |
| Period | 12-11-02 → 12-11-06 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
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A low power CMOS temperature sensor. / Yi, Shu-chung.
Innovation for Applied Science and Technology. 2013. p. 1729-1733 (Applied Mechanics and Materials; Vol. 284-287).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A low power CMOS temperature sensor
AU - Yi, Shu-chung
PY - 2013/2/20
Y1 - 2013/2/20
N2 - This paper proposed a low-power smart temperature sensor. The sensor consisted of a PTAT circuit, and a ring oscillator. The current of the PTAT circuit was used to drive the ring oscillator which generates a temperature related signal. The sensor was implemented by the TSMC CMOS 0.35 μm 2P4M digital process. The core area is only 1105.59 μm2. The power consumption is about 159.15 nW. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.991 during the temperature range. The proposed sensor required only one supply voltage. The core area was small. Therefore, the sensor was suitable for embedded in any circuit that required temperature monitoring.
AB - This paper proposed a low-power smart temperature sensor. The sensor consisted of a PTAT circuit, and a ring oscillator. The current of the PTAT circuit was used to drive the ring oscillator which generates a temperature related signal. The sensor was implemented by the TSMC CMOS 0.35 μm 2P4M digital process. The core area is only 1105.59 μm2. The power consumption is about 159.15 nW. The linearity between the output frequency and temperature is marked by R-square rule. The value of the linearity is 0.991 during the temperature range. The proposed sensor required only one supply voltage. The core area was small. Therefore, the sensor was suitable for embedded in any circuit that required temperature monitoring.
UR - http://www.scopus.com/inward/record.url?scp=84873921012&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873921012&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.284-287.1729
DO - 10.4028/www.scientific.net/AMM.284-287.1729
M3 - Conference contribution
AN - SCOPUS:84873921012
SN - 9783037856123
T3 - Applied Mechanics and Materials
SP - 1729
EP - 1733
BT - Innovation for Applied Science and Technology
ER -