A low-dropout regulator with low ESR, low line regulation and high currency efficiency using low output-resistance voltage buffer

Po Yu Kuo; Dian Zhou; Zhi Ming Lin

doi:10.1109/EDSSC.2007.4450165

A low-dropout regulator with low ESR, low line regulation and high currency efficiency using low output-resistance voltage buffer

Po Yu Kuo, Dian Zhou, Zhi Ming Lin

Department of Computer Science and Information Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Power management is necessary to reduce the standby power of portable electronics such as cellular phones, pagers, laptops, etc. The LDO (low-dropout regulator) is one of the most popular DC-DC converters widely used in power management and the demand for LDO is increasing by the growing demand for their applications. For Li-Ion battery of portable devices the input voltage generally varies from 2.7V to 4.2V, this paper demonstrates a 59mA LDO with input voltage operating from 2V to 3.52V. Simulated in 0.35μm CMOS technology, the LDO only use 1Ω effective series resistance (ESR). With a 2.3μF output capacitor and quiescent current 56μA, the maximum transient-output variation (overshoot voltage) is 58.98mV with full-load step change of 59mA.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	473-476
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450165
Publication status	Published - 2007 Dec 1
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Kuo, P. Y., Zhou, D., & Lin, Z. M. (2007). A low-dropout regulator with low ESR, low line regulation and high currency efficiency using low output-resistance voltage buffer. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 473-476). [4450165] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450165

@inproceedings{127cd458b3d949629dd80d0517f422e2,

title = "A low-dropout regulator with low ESR, low line regulation and high currency efficiency using low output-resistance voltage buffer",

abstract = "Power management is necessary to reduce the standby power of portable electronics such as cellular phones, pagers, laptops, etc. The LDO (low-dropout regulator) is one of the most popular DC-DC converters widely used in power management and the demand for LDO is increasing by the growing demand for their applications. For Li-Ion battery of portable devices the input voltage generally varies from 2.7V to 4.2V, this paper demonstrates a 59mA LDO with input voltage operating from 2V to 3.52V. Simulated in 0.35μm CMOS technology, the LDO only use 1Ω effective series resistance (ESR). With a 2.3μF output capacitor and quiescent current 56μA, the maximum transient-output variation (overshoot voltage) is 58.98mV with full-load step change of 59mA.",

author = "Kuo, {Po Yu} and Dian Zhou and Lin, {Zhi Ming}",

year = "2007",

month = dec

day = "1",

doi = "10.1109/EDSSC.2007.4450165",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "473--476",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Kuo, PY, Zhou, D & Lin, ZM 2007, A low-dropout regulator with low ESR, low line regulation and high currency efficiency using low output-resistance voltage buffer. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450165, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 473-476, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450165

A low-dropout regulator with low ESR, low line regulation and high currency efficiency using low output-resistance voltage buffer. / Kuo, Po Yu; Zhou, Dian; Lin, Zhi Ming.

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 473-476 4450165 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A low-dropout regulator with low ESR, low line regulation and high currency efficiency using low output-resistance voltage buffer

AU - Kuo, Po Yu

AU - Zhou, Dian

AU - Lin, Zhi Ming

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Power management is necessary to reduce the standby power of portable electronics such as cellular phones, pagers, laptops, etc. The LDO (low-dropout regulator) is one of the most popular DC-DC converters widely used in power management and the demand for LDO is increasing by the growing demand for their applications. For Li-Ion battery of portable devices the input voltage generally varies from 2.7V to 4.2V, this paper demonstrates a 59mA LDO with input voltage operating from 2V to 3.52V. Simulated in 0.35μm CMOS technology, the LDO only use 1Ω effective series resistance (ESR). With a 2.3μF output capacitor and quiescent current 56μA, the maximum transient-output variation (overshoot voltage) is 58.98mV with full-load step change of 59mA.

AB - Power management is necessary to reduce the standby power of portable electronics such as cellular phones, pagers, laptops, etc. The LDO (low-dropout regulator) is one of the most popular DC-DC converters widely used in power management and the demand for LDO is increasing by the growing demand for their applications. For Li-Ion battery of portable devices the input voltage generally varies from 2.7V to 4.2V, this paper demonstrates a 59mA LDO with input voltage operating from 2V to 3.52V. Simulated in 0.35μm CMOS technology, the LDO only use 1Ω effective series resistance (ESR). With a 2.3μF output capacitor and quiescent current 56μA, the maximum transient-output variation (overshoot voltage) is 58.98mV with full-load step change of 59mA.

UR - http://www.scopus.com/inward/record.url?scp=43049164015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049164015&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2007.4450165

DO - 10.1109/EDSSC.2007.4450165

M3 - Conference contribution

AN - SCOPUS:43049164015

SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 473

EP - 476

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Kuo PY, Zhou D, Lin ZM. A low-dropout regulator with low ESR, low line regulation and high currency efficiency using low output-resistance voltage buffer. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 473-476. 4450165. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450165

Access to Document

10.1109/EDSSC.2007.4450165