TY - GEN
T1 - A low-dropout regulator with low ESR, low line regulation and high currency efficiency using low output-resistance voltage buffer
AU - Kuo, Po Yu
AU - Zhou, Dian
AU - Lin, Zhi Ming
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Power management is necessary to reduce the standby power of portable electronics such as cellular phones, pagers, laptops, etc. The LDO (low-dropout regulator) is one of the most popular DC-DC converters widely used in power management and the demand for LDO is increasing by the growing demand for their applications. For Li-Ion battery of portable devices the input voltage generally varies from 2.7V to 4.2V, this paper demonstrates a 59mA LDO with input voltage operating from 2V to 3.52V. Simulated in 0.35μm CMOS technology, the LDO only use 1Ω effective series resistance (ESR). With a 2.3μF output capacitor and quiescent current 56μA, the maximum transient-output variation (overshoot voltage) is 58.98mV with full-load step change of 59mA.
AB - Power management is necessary to reduce the standby power of portable electronics such as cellular phones, pagers, laptops, etc. The LDO (low-dropout regulator) is one of the most popular DC-DC converters widely used in power management and the demand for LDO is increasing by the growing demand for their applications. For Li-Ion battery of portable devices the input voltage generally varies from 2.7V to 4.2V, this paper demonstrates a 59mA LDO with input voltage operating from 2V to 3.52V. Simulated in 0.35μm CMOS technology, the LDO only use 1Ω effective series resistance (ESR). With a 2.3μF output capacitor and quiescent current 56μA, the maximum transient-output variation (overshoot voltage) is 58.98mV with full-load step change of 59mA.
UR - http://www.scopus.com/inward/record.url?scp=43049164015&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43049164015&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2007.4450165
DO - 10.1109/EDSSC.2007.4450165
M3 - Conference contribution
AN - SCOPUS:43049164015
SN - 1424406374
SN - 9781424406371
T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
SP - 473
EP - 476
BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Y2 - 20 December 2007 through 22 December 2007
ER -