A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors

E. Y. Chang, Yeong Lin Lai, Y. S. Lee, S. H. Chen

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A highly selective wet chemical etch process for gate recess of the GaAs power metal-semiconductor field effect transistors (MESFETs) was developed. The power MESFETs used in this study were epitaxially grown devices with a 20 A AlAs etch-stop layer for gate recess. The selective etch process using citric acid/potassium citrate/hydrogen peroxide solution was studied. A selectivity better than 3800:1 was achieved for GaAs/AlAs layers. This selective etch was applied both to high-power, high-voltage power MESFETs and low-voltage large-periphery power MESFETs. For high-power applications, the 14.7 mm device had a breakdown voltage of 22 V. When tested at 1.88 GHz with a drain bias of 10 V, it provided a maximum output power of 38.8 dBm and a maximum power-added efficiency of 52.5%. For low-voltage applications, the 19.8 mm device was tested under IS-95 code-division multiple access (CDMA) modulation at 1.88 GHz with a drain bias of 3.5 V. Under CDMA modulation, the device showed an output power of 28.03 dBm with an adjacent channel power rejection of -29.6 dBc at 1.25 MHz offset frequency. Both devices also showed excellent uniformity in pinch-off voltaces.

Original languageEnglish
Pages (from-to)G4-G9
JournalJournal of the Electrochemical Society
Volume148
Issue number1
DOIs
Publication statusPublished - 2001 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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