A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors

E. Y. Chang, Yeong Lin Lai, Y. S. Lee, S. H. Chen

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A highly selective wet chemical etch process for gate recess of the GaAs power metal-semiconductor field effect transistors (MESFETs) was developed. The power MESFETs used in this study were epitaxially grown devices with a 20 A AlAs etch-stop layer for gate recess. The selective etch process using citric acid/potassium citrate/hydrogen peroxide solution was studied. A selectivity better than 3800:1 was achieved for GaAs/AlAs layers. This selective etch was applied both to high-power, high-voltage power MESFETs and low-voltage large-periphery power MESFETs. For high-power applications, the 14.7 mm device had a breakdown voltage of 22 V. When tested at 1.88 GHz with a drain bias of 10 V, it provided a maximum output power of 38.8 dBm and a maximum power-added efficiency of 52.5%. For low-voltage applications, the 19.8 mm device was tested under IS-95 code-division multiple access (CDMA) modulation at 1.88 GHz with a drain bias of 3.5 V. Under CDMA modulation, the device showed an output power of 28.03 dBm with an adjacent channel power rejection of -29.6 dBc at 1.25 MHz offset frequency. Both devices also showed excellent uniformity in pinch-off voltaces.

Original languageEnglish
Pages (from-to)G4-G9
JournalJournal of the Electrochemical Society
Volume148
Issue number1
DOIs
Publication statusPublished - 2001 Jan 1

Fingerprint

MESFET devices
Gates (transistor)
recesses
field effect transistors
metals
Code division multiple access
code division multiple access
Electric potential
Potassium Citrate
low voltage
Modulation
Citric acid
modulation
Electric breakdown
Hydrogen peroxide
Citric Acid
Hydrogen Peroxide
citric acid
output
Potassium

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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abstract = "A highly selective wet chemical etch process for gate recess of the GaAs power metal-semiconductor field effect transistors (MESFETs) was developed. The power MESFETs used in this study were epitaxially grown devices with a 20 A AlAs etch-stop layer for gate recess. The selective etch process using citric acid/potassium citrate/hydrogen peroxide solution was studied. A selectivity better than 3800:1 was achieved for GaAs/AlAs layers. This selective etch was applied both to high-power, high-voltage power MESFETs and low-voltage large-periphery power MESFETs. For high-power applications, the 14.7 mm device had a breakdown voltage of 22 V. When tested at 1.88 GHz with a drain bias of 10 V, it provided a maximum output power of 38.8 dBm and a maximum power-added efficiency of 52.5{\%}. For low-voltage applications, the 19.8 mm device was tested under IS-95 code-division multiple access (CDMA) modulation at 1.88 GHz with a drain bias of 3.5 V. Under CDMA modulation, the device showed an output power of 28.03 dBm with an adjacent channel power rejection of -29.6 dBc at 1.25 MHz offset frequency. Both devices also showed excellent uniformity in pinch-off voltaces.",
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A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors. / Chang, E. Y.; Lai, Yeong Lin; Lee, Y. S.; Chen, S. H.

In: Journal of the Electrochemical Society, Vol. 148, No. 1, 01.01.2001, p. G4-G9.

Research output: Contribution to journalArticle

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