A comparative study on single and double channel AlGaN/GaN high electron mobility transistor

Jing Yao Zheng, Jenq Shinn Wu, Der Yuh Lin, Hung Ji Lin

Research output: Contribution to journalConference article

1 Citation (Scopus)


We present a numerical investigation on the DC and AC characteristics of AlGaN/GaN single (SCHEMT) and double channel high electron mobility transistors (DCHEMT) using the APSYS simulation program. The simulation results indicate that the DCHEMT has a slightly wider range of transconductance and cut-off frequency for device operation at high current levels than SCHEMT. Besides, we also examine the effect of barrier layer thickness between the two channels in DCHEMT on the transconductance profile. It is found that the operation range of transconductance can be tailored by adjusting the barrier layer thickness.

Original languageEnglish
Pages (from-to)1944-1946
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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