A comparative study on single and double channel AlGaN/GaN high electron mobility transistor

Jing Yao Zheng, Jenq Shinn Wu, Der Yuh Lin, Hung Ji Lin

Research output: Contribution to journalConference article

Abstract

We present a numerical investigation on the DC and AC characteristics of AlGaN/GaN single (SCHEMT) and double channel high electron mobility transistors (DCHEMT) using the APSYS simulation program. The simulation results indicate that the DCHEMT has a slightly wider range of transconductance and cut-off frequency for device operation at high current levels than SCHEMT. Besides, we also examine the effect of barrier layer thickness between the two channels in DCHEMT on the transconductance profile. It is found that the operation range of transconductance can be tailored by adjusting the barrier layer thickness.

Original languageEnglish
Pages (from-to)1944-1946
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21

Fingerprint

high electron mobility transistors
transconductance
barrier layers
high current
alternating current
cut-off
simulation
direct current
adjusting
profiles

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

@article{ae51ddfa131c473781b3b7a9d689e4b2,
title = "A comparative study on single and double channel AlGaN/GaN high electron mobility transistor",
abstract = "We present a numerical investigation on the DC and AC characteristics of AlGaN/GaN single (SCHEMT) and double channel high electron mobility transistors (DCHEMT) using the APSYS simulation program. The simulation results indicate that the DCHEMT has a slightly wider range of transconductance and cut-off frequency for device operation at high current levels than SCHEMT. Besides, we also examine the effect of barrier layer thickness between the two channels in DCHEMT on the transconductance profile. It is found that the operation range of transconductance can be tailored by adjusting the barrier layer thickness.",
author = "Zheng, {Jing Yao} and Wu, {Jenq Shinn} and Lin, {Der Yuh} and Lin, {Hung Ji}",
year = "2008",
month = "12",
day = "1",
doi = "10.1002/pssc.200778501",
language = "English",
volume = "5",
pages = "1944--1946",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "6",

}

A comparative study on single and double channel AlGaN/GaN high electron mobility transistor. / Zheng, Jing Yao; Wu, Jenq Shinn; Lin, Der Yuh; Lin, Hung Ji.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 01.12.2008, p. 1944-1946.

Research output: Contribution to journalConference article

TY - JOUR

T1 - A comparative study on single and double channel AlGaN/GaN high electron mobility transistor

AU - Zheng, Jing Yao

AU - Wu, Jenq Shinn

AU - Lin, Der Yuh

AU - Lin, Hung Ji

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We present a numerical investigation on the DC and AC characteristics of AlGaN/GaN single (SCHEMT) and double channel high electron mobility transistors (DCHEMT) using the APSYS simulation program. The simulation results indicate that the DCHEMT has a slightly wider range of transconductance and cut-off frequency for device operation at high current levels than SCHEMT. Besides, we also examine the effect of barrier layer thickness between the two channels in DCHEMT on the transconductance profile. It is found that the operation range of transconductance can be tailored by adjusting the barrier layer thickness.

AB - We present a numerical investigation on the DC and AC characteristics of AlGaN/GaN single (SCHEMT) and double channel high electron mobility transistors (DCHEMT) using the APSYS simulation program. The simulation results indicate that the DCHEMT has a slightly wider range of transconductance and cut-off frequency for device operation at high current levels than SCHEMT. Besides, we also examine the effect of barrier layer thickness between the two channels in DCHEMT on the transconductance profile. It is found that the operation range of transconductance can be tailored by adjusting the barrier layer thickness.

UR - http://www.scopus.com/inward/record.url?scp=77951241552&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951241552&partnerID=8YFLogxK

U2 - 10.1002/pssc.200778501

DO - 10.1002/pssc.200778501

M3 - Conference article

AN - SCOPUS:77951241552

VL - 5

SP - 1944

EP - 1946

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 6

ER -