5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

Yeong Lin Lai; Edward Y. Chang; Chun Yen Chang; T. K. Chen; T. H. Liu; S. P. Wang; T. H. Chen; C. T. Lee

doi:10.1109/55.491838

5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

Yeong Lin Lai, Edward Y. Chang, Chun Yen Chang, T. K. Chen, T. H. Liu, S. P. Wang, T. H. Chen, C. T. Lee

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at V_gs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.

Original language	English
Pages (from-to)	229-231
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	5
DOIs	https://doi.org/10.1109/55.491838
Publication status	Published - 1996 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.491838

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title = "5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications",

abstract = "A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.",

author = "Lai, {Yeong Lin} and Chang, {Edward Y.} and Chang, {Chun Yen} and Chen, {T. K.} and Liu, {T. H.} and Wang, {S. P.} and Chen, {T. H.} and Lee, {C. T.}",

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T1 - 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

AU - Lai, Yeong Lin

AU - Chang, Edward Y.

AU - Chang, Chun Yen

AU - Chen, T. K.

AU - Liu, T. H.

AU - Wang, S. P.

AU - Chen, T. H.

AU - Lee, C. T.

PY - 1996/5/1

Y1 - 1996/5/1

N2 - A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.

AB - A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.

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