A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering