Abstract
A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.
| Original language | English |
|---|---|
| Pages (from-to) | 229-231 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 17 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1996 May 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications. / Lai, Yeong Lin; Chang, Edward Y.; Chang, Chun Yen; Chen, T. K.; Liu, T. H.; Wang, S. P.; Chen, T. H.; Lee, C. T.
In: IEEE Electron Device Letters, Vol. 17, No. 5, 01.05.1996, p. 229-231.Research output: Contribution to journal › Article
TY - JOUR
T1 - 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications
AU - Lai, Yeong Lin
AU - Chang, Edward Y.
AU - Chang, Chun Yen
AU - Chen, T. K.
AU - Liu, T. H.
AU - Wang, S. P.
AU - Chen, T. H.
AU - Lee, C. T.
PY - 1996/5/1
Y1 - 1996/5/1
N2 - A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.
AB - A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.
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U2 - 10.1109/55.491838
DO - 10.1109/55.491838
M3 - Article
AN - SCOPUS:0030150086
VL - 17
SP - 229
EP - 231
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 5
ER -