5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

Yeong Lin Lai, Edward Y. Chang, Chun Yen Chang, T. K. Chen, T. H. Liu, S. P. Wang, T. H. Chen, C. T. Lee

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.

Original languageEnglish
Pages (from-to)229-231
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number5
DOIs
Publication statusPublished - 1996 May 1

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High electron mobility transistors
Cellular telephone systems
Transconductance
Electric potential
Current density
Power HEMT
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lai, Y. L., Chang, E. Y., Chang, C. Y., Chen, T. K., Liu, T. H., Wang, S. P., ... Lee, C. T. (1996). 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications. IEEE Electron Device Letters, 17(5), 229-231. https://doi.org/10.1109/55.491838
Lai, Yeong Lin ; Chang, Edward Y. ; Chang, Chun Yen ; Chen, T. K. ; Liu, T. H. ; Wang, S. P. ; Chen, T. H. ; Lee, C. T. / 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications. In: IEEE Electron Device Letters. 1996 ; Vol. 17, No. 5. pp. 229-231.
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Lai, YL, Chang, EY, Chang, CY, Chen, TK, Liu, TH, Wang, SP, Chen, TH & Lee, CT 1996, '5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications', IEEE Electron Device Letters, vol. 17, no. 5, pp. 229-231. https://doi.org/10.1109/55.491838

5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications. / Lai, Yeong Lin; Chang, Edward Y.; Chang, Chun Yen; Chen, T. K.; Liu, T. H.; Wang, S. P.; Chen, T. H.; Lee, C. T.

In: IEEE Electron Device Letters, Vol. 17, No. 5, 01.05.1996, p. 229-231.

Research output: Contribution to journalArticle

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AU - Lai, Yeong Lin

AU - Chang, Edward Y.

AU - Chang, Chun Yen

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AU - Liu, T. H.

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AU - Chen, T. H.

AU - Lee, C. T.

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AB - A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.

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