Abstract
A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.
| Original language | English |
|---|---|
| Pages (from-to) | 229-231 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 17 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1996 May 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Lai, Y. L., Chang, E. Y., Chang, C. Y., Chen, T. K., Liu, T. H., Wang, S. P., Chen, T. H., & Lee, C. T. (1996). 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications. IEEE Electron Device Letters, 17(5), 229-231. https://doi.org/10.1109/55.491838