2-V-operation δ-doped power HEMT's for personal handy-phone systems

Yeong Lin Lai, Edward Y. Chang, Chun Yen Chang, T. H. Liu, S. P. Wang, H. T. Hsu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A high-efficiency and high-power-density δ-doped AlGaAs/InGaAs HEMT with low adjacent channel leakage has been developed for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.0-V-operation HEMT with a 1-mm gate width demonstrated a power-added efficiency of 45.3% and an output power density of 105 mW/mm. This is the highest power density ever reported by the power transistors for the PHS. The state-of-the-art results for the PHS operating at 2.0 V were achieved by the δ-doped power HEMT for the first time.

Original languageEnglish
Pages (from-to)219-221
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume7
Issue number8
DOIs
Publication statusPublished - 1997 Aug 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
radiant flux density
Quadrature phase shift keying
quadrature phase shift keying
power efficiency
aluminum gallium arsenides
leakage
transistors
output
Power HEMT
Power transistors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lai, Yeong Lin ; Chang, Edward Y. ; Chang, Chun Yen ; Liu, T. H. ; Wang, S. P. ; Hsu, H. T. / 2-V-operation δ-doped power HEMT's for personal handy-phone systems. In: IEEE Microwave and Guided Wave Letters. 1997 ; Vol. 7, No. 8. pp. 219-221.
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2-V-operation δ-doped power HEMT's for personal handy-phone systems. / Lai, Yeong Lin; Chang, Edward Y.; Chang, Chun Yen; Liu, T. H.; Wang, S. P.; Hsu, H. T.

In: IEEE Microwave and Guided Wave Letters, Vol. 7, No. 8, 01.08.1997, p. 219-221.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Lai, Yeong Lin

AU - Chang, Edward Y.

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AU - Hsu, H. T.

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AB - A high-efficiency and high-power-density δ-doped AlGaAs/InGaAs HEMT with low adjacent channel leakage has been developed for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.0-V-operation HEMT with a 1-mm gate width demonstrated a power-added efficiency of 45.3% and an output power density of 105 mW/mm. This is the highest power density ever reported by the power transistors for the PHS. The state-of-the-art results for the PHS operating at 2.0 V were achieved by the δ-doped power HEMT for the first time.

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