Jenq-Shinn Wu

Assistant Professor

  • 180 Citations
  • 7 h-Index
1989 …2019
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resonant tunneling Physics & Astronomy
Resonant tunneling Engineering & Materials Science
aluminum gallium arsenides Physics & Astronomy
molecular beam epitaxy Physics & Astronomy
photoluminescence Physics & Astronomy
high electron mobility transistors Physics & Astronomy
Photoluminescence Engineering & Materials Science
quantum wells Physics & Astronomy

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Research Output 1989 2019

  • 180 Citations
  • 7 h-Index
  • 32 Article
  • 4 Conference article
  • 1 Review article

Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

Tsai, Y. H., Wu, Y. H., Ting, Y. Y., Wu, C. C., Wu, J. S. & Lin, S. D., 2019 Oct 1, In : AIP Advances. 9, 10, 105001.

Research output: Contribution to journalArticle

Open Access
molecular beam epitaxy
superconducting devices
surface roughness
x rays
2 Citations (Scopus)

Optical characterization and photovoltaic performance evaluation of GaAs p-i-n solar cells with various metal grid spacings

Wu, J. S., Lin, D. Y., Li, Y. G., Hsu, H. P., Kao, M. C. & Chen, H. Z., 2019 Mar, In : Crystals. 9, 3, 170.

Research output: Contribution to journalArticle

Open Access
Solar cells
solar cells

Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms

Cheng, C. C., Wu, C. C., Fan, Y. T., Wu, J-S. & Lin, S. D., 2018 Sep 1, In : AIP Advances. 8, 9, 095029.

Research output: Contribution to journalArticle

acceleration (physics)
high electron mobility transistors
3 Citations (Scopus)

Atomic-scale epitaxial aluminum film on GaAs substrate

Fan, Y. T., Lo, M. C., Wu, C. C., Chen, P. Y., Wu, J. S., Liang, C. T. & Lin, S. D., 2017 Jul 1, In : AIP Advances. 7, 7, 075213.

Research output: Contribution to journalArticle

metal films

High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

Wu, D. C., Pan, Y. W., Wu, J-S., Lin, S. W. & Lin, S. D., 2016 Apr 25, In : Applied Physics Letters. 108, 17, 172403.

Research output: Contribution to journalArticle

aluminum gallium arsenides
high electron mobility transistors
quantum wells